| Allicdata Part #: | IRFSL7534PBF-ND |
| Manufacturer Part#: |
IRFSL7534PBF |
| Price: | $ 1.17 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 195A D2PAK |
| More Detail: | N-Channel 60V 195A (Tc) 294W (Tc) Surface Mount TO... |
| DataSheet: | IRFSL7534PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.04980 |
| Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 294W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10034pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 279nC @ 10V |
| Series: | HEXFET®, StrongIRFET™ |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFSL7534PBF is a power field-effect transistor with a level of performance that is suitable for a variety of applications in both commercial and industrial applications. By utilizing the advanced technology of a MOSFET field-effect transistor, it is able to provide considerable output current with a very low on-resistance. The mini-DIP packages gives the IRFSL7534PBF the ability to be processed in a wide range of devices which require low power, while its small size makes it ideal for miniaturized designs.The IRFSL7534PBF is a single N-channel MOSFET device with a high voltage tolerance of up to 100V. This makes it ideal for applications where a high voltage is necessary in order to produce the desired output current. This transistor is composed of a thin-film MOSFET gate and source, which is coated with a thin dielectric layer. This dielectric layer acts as an insulator, preventing the source and gate from coming into contact with each other. The IRFSL7534PBF is also capable of operating at a temperature range of -55 to +150˚C, making it suitable for applications in environments with extreme temperature conditions.The IRFSL7534PBF is able to provide high efficiency output current by utilizing the MOSFET technology. When the gate voltage is applied, a thin conductive channel is formed between the source and the drain, allowing current to flow from the source to the drain. The size of this conductive channel is determined by the gate voltage, and when the gate voltage is increased, the channel width becomes larger, allowing more current to pass through.In addition to its high voltage tolerance and efficiency, the IRFSL7534PBF also offers excellent protection against electrostatic discharge (ESD) due to its integrated ESD protection circuit. This circuit can detect ESD events and shut off the power to the device, preventing it from being damaged. This makes it suitable for use in applications where ESD protection is necessary.The IRFSL7534PBF is widely used in a variety of applications, including power electronics, automotive electronics, audio systems, and in medical and industrial devices. In these applications it is often used to regulate the output current of power supplies, amplifiers, and switch-mode power supplies (SMPS). It can also be used in motors and other electronic equipment to provide a safe and efficient power source.In conclusion, the IRFSL7534PBF is a single N-channel MOSFET device that offers high voltage tolerance, high current output, and excellent ESD protection. Its mini-DIP package allows for easy integration in small designs, making it ideal for space constrained applications. With its wide range of uses and its high performance, it is a highly versatile and reliable device that is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRFSL7534PBF Datasheet/PDF