IRFU1205 Allicdata Electronics
Allicdata Part #:

IRFU1205-ND

Manufacturer Part#:

IRFU1205

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 44A I-PAK
More Detail: N-Channel 55V 44A (Tc) 107W (Tc) Through Hole IPAK...
DataSheet: IRFU1205 datasheetIRFU1205 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFU1205 is a type of insulated gate field effect transistor (IGFET), more specifically a metal oxide semiconductor field effect transistor (MOSFET), most commonly used as a discrete electronic component. It is considered a "single gate MOSFET" as it contains only one gate terminal on the device, as opposed to two in two gate MOSFETs, and three in three gate MOSFETs. IRFU1205 is a depletion-mode MOSFET, meaning that the threshold voltage, the amount needed to turn the transistor on, is negative.

IRFU1205 is commonly used in a variety of applications, some of which are in power applications, such as power switching and power control, as well as in automotive electronics, where a high voltage is required. In these applications, the IRFU1205 is usually used as an insulated gate bipolar transistor (IGBT), and is especially suitable for high-voltage, low-current applications. Other applications of the IRFU1205 MOSFET include audio and power amplifier design, voltage-controlled oscillators (VCOs), and monostable multivibrators. Additionally, the IRFU1205 is commonly used in the fabrication of integrated circuits.

The working principle of the IRFU1205 is quite simple. It is an insulated gate technoogy device, which means that when an electrical potential is applied to the gate terminal it creates an "inversion layer" in the p-type material. The positive voltage on the gate creates a negative charge in the inversion layer, thus allowing the current to pass from the source to the drain terminal. The current is regulated by the amount of voltage applied to the gate. At a lower potential, the transistor is "on," and a higher potential will turn it off, thus enabling the device to be used as a switch.

The IRFU1205 MOSFET is an important and widely used type of transistor, thanks to its ease of use and its wide variety of applications. Its single gate technology provides a highly reliable device when used to switch and control a wide range of voltages and currents. Its simple working principle also makes it popular in many applications, especially those that require a high degree of accuracy. This transistor is an invaluable component in modern electronics, and its presence will continue to be felt for many years to come.

The specific data is subject to PDF, and the above content is for reference

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