IRFU3707

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	87W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1990pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	61A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFU3707 Application Field and Working Principle

IRFU3707 is a type of N-Channel Field Effect Transistor (FET), more specifically a n-channel metal–oxide–semiconductor field-effect transistor (MOSFET). IRFU3707 is a transistor specifically designed for the usage on equipment which is expected to be subjected to a large amount of electrical noise or interference.

Application Field

IRFU3707 FETs are most commonly used for switching applications, particularly in high-frequency high-speed systems since it has a high transconductance value as well as low-capacitance input characteristics. Such applications include microwave amplifiers, high-frequency switching applications such as switching on and off power supplies, PWM-controlled motor drivers, relay drivers, etc. Additionally, IRFU3707 FETs are also often used in analog switches, audio crossover amplifiers, etc.

Working Principle

The IRFU3707 is an N-Channel FET; it is a 3-terminal solid state device made of a single MOSFET. N-channel MOSFET transistors have a gate, drain, and source. The gate is the control terminal, while the drain and source are the output terminals. When a positive potential is applied to the gate, the channel region between the drain and source is inverted, resulting in a conducting channel. When a negative potential is applied to the gate, the channel is \'off\', resulting in no current flow between the source and the drain. The drain–source voltage is used to control the current from the drain to the source. The device, by virtue of its design, can be used to amplify the applied voltage depending on the gain, which is predetermined by the device\'s physical characteristics. When the current is set by the impedance and voltage across the gate, the conducting path is then determined by the impedance and voltage between drain and source. In normal usage, the FET is biased and the gate-source voltage is maintained constant; by controlling the drain–source voltage, the drain current is then regulated. The drain current then determines the power dissipation; depending on the device family, FETs can have very high current rating and power dissipation levels.

Conclusion

IRFU3707 FETs are solid-state devices offering high levels of current regulation, low noise and power loss as well as high transconductance. They are frequently used in switching applications including microwave amplifiers, high-frequency switching, relay drivers, PWM-controlled motor drivers, audio crossover amplifiers, and analog switches. The operating principle of the IRFU3707 involves the usage of a single MOSFET with terminals for the gate, drain, and source, where the drain–source voltage is used to control the current from the drain to the source.

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