Allicdata Part #: | IRFU540ZPBF-ND |
Manufacturer Part#: |
IRFU540ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 35A IPAK |
More Detail: | N-Channel 100V 35A (Tc) 91W (Tc) Through Hole IPAK... |
DataSheet: | IRFU540ZPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 28.5 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 91W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRFU540ZPBF is a transistor. Specifically, it is a field-effect transistor, or FET, and more specifically it is a single type, also known as a single junction type. It is used in a number of applications because of its ability to provide logic level switching and analog power control.
A field-effect transistor is based on the principle of operation of a p-n junction diode. However, instead of the diodes allowing or blocking current flow through a small p-n junction, the FET allows or blocks current flow through an array of connected junctions. The device operates by controlling the flow of electrons from the source to the drain through the channel between them. The channel is created by the depletion of free electrons from the junction and the gate allows or blocks current flow through the junction as it is charged. This control makes the FET an ideal choice for power controlling devices.
The IRFU540ZPBF presents several advantages, including low input capacitance, a high threshold voltage, low ON-channel resistance, and good thermal stability. These features make the device suitable for a number of different applications, notably in the fields of power electronics, automotive powertrain control, and switch mode power supplies. The device is also found in a variety of other applications, such as drive circuits, radio receiver amplifiers, and temperature controllers.
In addition to its many applications, the IRFU540ZPBF is remarkably versatile. It can be used with either N- or P-channel devices and its drain has the capability for both symmetrical and unsymmetrical designs. The device is made from a high-performance silicon material, with the drain and the source constructed from lightly doped and heavily doped sections, respectively, allowing for a low ON-resistance and a low threshold voltage.
The IRFU540ZPBF FET is widely used in a number of applications, due to its unique design and suitability for a variety of needs. Its low input capacitance, high threshold voltage, low ON-channel resistance, and good thermal stability make it ideal for a variety of purposes, such as power electronics, automotive powertrain control, switch mode power supplies, drive circuits, radio receiver amplifiers, and temperature controllers.
The specific data is subject to PDF, and the above content is for reference
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