| Allicdata Part #: | IRFU2407-ND |
| Manufacturer Part#: |
IRFU2407 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 42A I-PAK |
| More Detail: | N-Channel 75V 42A (Tc) 110W (Tc) Through Hole IPAK... |
| DataSheet: | IRFU2407 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | IPAK (TO-251) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFU2407 is a three-terminal N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is made of gallium arsenide. It is specifically designed to have a low on-resistance of only 24 ohms when it is being operated at 10 volts, and it also has high input impedance and low power consumption.
The IRFU2407 can be used in a variety of applications where low on-resistance is important such as in power converters, amplifiers, low-frequency switching applications, and low-noise audio and video circuits. It is also suitable for many digital applications such as logic circuits, and it can also be used in medical devices, computers, and telecommunications equipment.
The working principle of the IRFU2407 is based on its ability to switch current between two terminals by controlling the voltage applied to a third terminal. When a positive voltage is applied to the gate of the transistors, the channel between the two other terminals is opened and current will flow. Conversely, when a negative voltage is applied to the gate of the transistor, the channel will close and no current will flow.
The three terminals of the IRFU2407 are the gate, source, and drain. The gate terminal is responsible for turning the current flow on and off, the source and drain terminals serve as the paths for current to enter and exit the transistor, and the drain terminal is connected to the circuit in which the current will flow.
The IRFU2407 MOSFET is designed to be very efficient in terms of the power required to control the gate. It has very low gate-drain capacitance, which means that it can be switched on and off quickly and smoothly. This makes it ideal for low-noise digital circuits and low-power switching applications. Additionally, the off-state leakage current of the IRFU2407 is very low, making it suitable for applications where power consumption must be kept to a minimum.
The IRFU2407 is a versatile three-terminal N-channel enhancement mode MOSFET, which has low on-resistance and high input impedance when operated at a low voltage. It is suitable for many digital and analog applications, is highly efficient in terms of power consumption, and can be switched on and off quickly and smoothly. The IRFU2407 makes an excellent choice for any application that requires low power consumption, high switching speeds, and low noise.
The specific data is subject to PDF, and the above content is for reference
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IRFU2407 Datasheet/PDF