IRFU9N20D

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFU9N20D MOSFET is a Single Power MOSFET, a type of metal-oxide semiconductor field-effect transistor. Its main purpose is to provide a low on-resistance drive for high current loads.

The IRFU9N20D is part of a series of Power MOSFETs manufactured by International Rectifier that have been optimized to have low gate charges and low gate-drain capacitances, making them the optimal type of device for switching applications.

The IRFU9N20D has a maximum drain-source voltage of 900V. It also has a drain current rating of 20A and a single-pulse avalanche energy rating of 175mJ. The oxide capacitance (Coss) of the device is relatively low compared to other similar devices and it exhibits good temperature stability.

The IRFU9N20D is most commonly used for motor drives, uninterruptible power supplies (UPS), power adaptors, and other types of power-supply applications where low on-resistance and high current density is desired. It can also be used for switching applications, such as power amplifiers and DC-DC converters, where its low capacitance characteristics provide superior load switching performance.

The IRFU9N20D MOSFET has three terminals – the source, the drain and the gate. The source and the drain are where the current flow through the device. The gate controls the current flow. The source is usually connected to the negative terminal of the power supply, and the drain is connected to the positive terminal.

The MOSFET works by utilizing a voltage on the gate to create a conductive channel between the source and the drain. This is called the depletion region. The voltage on the gate controls the width of this channel and thus the current flow across it. Increasing the voltage on the gate increases the current flow and vice versa.

When the gate voltage is low, the depletion region is wide and the current flow is low. When the gate voltage is high, the depletion region is narrow and the current flow is high. This high current flow is what is used to drive the load. The MOSFET is able to switch a large amount of current with very low losses.

The IRFU9N20D is a versatile device that has a lot of potential applications. It has especially been used in modern power supplies and engine-control systems, where its low on-resistance and low capacitance characteristics allow it to handle high currents with very low losses.

In conclusion, the IRFU9N20D is an efficient and reliable Single Power MOSFET, used mainly for its great current capacity and low on-resistance characteristics. Its various application fields include motor drives, power adaptors, switching applications, power amplifiers, and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference