Allicdata Part #: | IRLMS2002-ND |
Manufacturer Part#: |
IRLMS2002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 6.5A TSOP-6 |
More Detail: | N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micr... |
DataSheet: | IRLMS2002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | Micro6™(SOT23-6) |
Mounting Type: | Surface Mount |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Infrared Light-Matter Interaction (IRLMS) describes the interaction between matter and light, i.e., how light is absorbed or reflected by a material, and the application of IRLMS2002 in the field of transistors and FETs, specifically single MOSFETs.
The principle of infrared light-matter interaction is based on the fact that when infrared light (wavelength between 0.78 - 0.74μm) impinges upon a material excited state that is higher in energy than the ground state, the material absorbs part of the energy of the photon and is converted to an excited state. This process causes a decrease in the electric potential of the material, resulting in the generation of a current which is conducted from the material in the form of a flow of electrons.
The application of IRLMS2002 in the field of single MOSFETs is based on the fact that when a single semiconductor FET such as an MOSFET receives an infrared light source, a steady small current is generated as the electron-hole pairs move as a result of the absorption of the light photons. The current then produces electric potentials and charges across the gate and body of the FET, which can be used to control and change the biasing state of the transistor.
In IRLMS2002, the current gain of the single MOSFET is determined mainly by the value of the reverse bias voltage applied to the drain terminal. As the voltage is increased, the current gain of the device increases, giving it a higher current gain as compared to other transistors. This makes the single MOSFET an ideal choice for applications requiring high-speed switching, such as power supplies and electronic appliances.
The working principle of IRLMS2002 can be illustrated by the circuit diagram of a single MOSFET. When an infrared light source is applied to the gate of a single MOSFET, a current (Iph) is generated through the gate terminal. The LED light-emitting diode at the drain terminal of the FET acts as a current source, indicating the current that is generated across the gate and body of the FET when an infrared light source is applied. The current generated across the gate terminal of the single MOSFET is then used to change the biasing state of the device, and hence the gain of the device.
The biasing state of the single MOSFET determines the current gain of the device. The gain of the device is determined by the size of the reverse bias voltage applied to the drain terminal. The bigger the reverse bias voltage, the higher the current gain of the device. IRLMS2002 provides a means to accurately set the biasing state of the single MOSFET, giving it a higher current gain than other transistors.
In conclusion, the application of IRLMS2002 in the field of single MOSFETs provides an efficient way to utilize the infrared light sources in the generation of microscopic currents in the single MOSFET devices. The currents generated in the single MOSFETs can then be used to set the biasing state, and hence the current gain, of the device. The application of IRLMS2002 technology has enabled the development of new devices with better performance and power efficiency, thus enhancing the efficiency of transistors and FETs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRLMS2002GTRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.5A 6TSO... |
IRLMS5703TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 2.3A 6-TS... |
IRLMS6702TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 2.4A 6-TS... |
IRLML2402TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 1.2A SOT-... |
IRLML2502TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 4.2A SOT-... |
IRLML2803TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 1.2A SOT-... |
IRLML5103TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 760MA SOT... |
IRLML6302TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 780MA SOT... |
IRLML6401TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 12V 4.3A SOT-... |
IRLML6402TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 3.7A SOT-... |
IRLMS1503TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 3.2A 6-TS... |
IRLMS1902TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 3.2A 6-TS... |
IRLMS6802TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 5.6A 6-TS... |
IRLMS2002 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.5A TSOP... |
IRLML5203 | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 3A SOT-23... |
IRLMS4502TR | Infineon Tec... | -- | 1000 | MOSFET P-CH 12V 5.5A 6-TS... |
IRLM210ATF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 770MA SO... |
IRLM110ATF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLMS2002TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 6.5A 6-TS... |
IRLML2502GTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 4.2A SOT-... |
IRLML6402GTRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 3.7A SOT-... |
IRLMS6802TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 5.6A 6-TS... |
IRLMS5703TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 2.4A 6-TS... |
IRLML2060TRPBF | Infineon Tec... | -- | 45000 | MOSFET N-CH 60V 1.2A SOT2... |
IRLML2402TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 1.2A SOT-... |
IRLML6402TRPBF | Infineon Tec... | -- | 34511 | MOSFET P-CH 20V 3.7A SOT-... |
IRLML6401TRPBF | Infineon Tec... | -- | 35788 | MOSFET P-CH 12V 4.3A SOT-... |
IRLML9301TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 3.6A SOT-... |
IRLML0030TRPBF | Infineon Tec... | -- | 50000 | MOSFET N-CH 30V 5.3A SOT-... |
IRLML5203TRPBF | Infineon Tec... | -- | 27552 | MOSFET P-CH 30V 3A SOT-23... |
IRLML2502TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 4.2A SOT-... |
IRLML0100TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.6A SOT... |
IRLM220ATF | ON Semicondu... | -- | 4000 | MOSFET N-CH 200V 1.13A SO... |
IRLM120ATF | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 2.3A SOT... |
IRLML6346TRPBF | Infineon Tec... | -- | 60000 | MOSFET N-CH 30V 3.4A SOT2... |
IRLML2803TRPBF | Infineon Tec... | -- | 135000 | MOSFET N-CH 30V 1.2A SOT-... |
IRLML5103TRPBF | Infineon Tec... | -- | 30000 | MOSFET P-CH 30V 760MA SOT... |
IRLML2246TRPBF | Infineon Tec... | -- | 81000 | MOSFET P-CH 20V 2.6A SOT2... |
IRLML6344TRPBF | Infineon Tec... | -- | 294000 | MOSFET N-CH 30V 5A SOT23N... |
IRLML6302TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 780MA SOT... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...