Allicdata Part #: | IRLMS5703PBFTR-ND |
Manufacturer Part#: |
IRLMS5703TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 2.4A 6-TSOP |
More Detail: | P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Mi... |
DataSheet: | IRLMS5703TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | Micro6™(TSOP-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLMS5703TRPBF is a single N-channel, enhancement-mode, suspended trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Infineon Technologies. This MOSFET is part of the Infineon\'s CoolMOS™ CP series of highly efficient power transistors. The IRLMS5703TRPBF is specially designed for switching applications in low-voltage, high-power applications and offers superior performance in terms of low gate-charge, low resistance, and fast switching speed. Additionally, it has an exceptional thermal resistance and a scalability option.ApplicationsThe IRLMS5703TRPBF is suitable for use in applications such as DC-DC converters, DC-AC inverters, motor control, lighting and power factor correction, DC-AC UPSsystems and active PFC applications.Working PrincipleThe working principle of MOSFETs involves three terminals: Source, Drain, and Gate. The Source and Drain terminals form the two n-type channels through which the current flows in an N-channel MOSFET. The Gate terminal is formed by a thin oxide layer separating the Source and Drain terminals. A potential applied across the Gate terminal controls the flow of current between the Source and the Drain terminals.The Gate terminal acts as an insulated switch, allowing current to flow through the channel when the Gate potential is applied. The Gate potential required for current conduction is known as the threshold voltage. The Gate-Source voltage drop is proportional to the channel current, enabling the MOSFET to be operated in either linear (or ohmic) mode or in saturation mode.In linear (or ohmic) mode, the voltage drop across the MOSFET is constant, while it is around 0.5 V to 0.7 V in saturation mode. The linear (ohmic) region can be used to control the current through the device linearly. The device current is dependent on the threshold voltage and the amount of Gate voltage applied.The IRLMS5703TRPBF is designed to be low-on resistance allowing low Gate-source and Gate-drain voltages, fast switching speed and superior thermal resistance.This makes it an ideal choice for high power applications.ConclusionThe IRLMS5703TRPBF is a single N-channel, enhancement-mode, suspended trench MOSFET from Infineon Technologies. It is suitable for use in low voltage and high power switching applications and offers superior performance in terms of low gate-charge, low resistance, and fast switching speed. Additionally, it has an exceptional thermal resistance and a scalability option.
The specific data is subject to PDF, and the above content is for reference
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