IRLZ44STRR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLZ44STRR is a state-of-the-art FET produced by International Rectifier. It is the industry’s first power mosfet optimized specifically for high-current, high-transconductance applications.

The IRLZ44STRR is a single N-Channel enhancement mode Silicon Gate Power MOSFET. It utilizes a state-of-the-art floating-channel technology to provide excellent RDS(on), reliability and performance. This device is optimized for high current, high transconductance applications, such as DC/DC converter applications and switching power supplies.

The Floating Channel Design of the IRLZ44STRR uses an advanced trench technology for the n-channel MOSFET. This device has tight RDS(on) and very low Vgs Gate Threshold Voltage with fast switching speeds and excellent thermal stability. The IRLZ44STRR offers a “Green” solution with low drain-induced barrier lowering (DIBL).

The main applications of IRLZ44STRR are in DC/DC converters, synchronous buck step-down converter for computing, telecom, and consumer applications, synchronous rectifiers for power factor correction and switching regulators for notebook, server, and consumer applications. It is also suitable for high-side load switch applications. It is basically designed for PWM switching applications with low gate drive requirements and high-side/high frequency operation.

The principle of operation of the IRLZ44STRR is its enhancement mode of operation. In this mode of operation, a voltage is applied to the gate terminal of the MOSFET in order to turn on the MOSFET. When the gate voltage reaches the threshold nge (Vgs_th), the MOSFET will be turned on. The gate voltage must remain greater than this threshold value for the MOSFET to remain in its “on” state. The enhancement mode of operation has the advantage of being able to turn on the MOSFET without having to provide any current to the gate terminal. This makes the IRLZ44STRR an excellent choice for applications that require high-current flows and/or high-frequency switching.

In addition to its enhancement mode of operation, the IRLZ44STRR also has a very low reverse transfer capacitance (Qrr) which helps to reduce EMI/RFI emissions. The low Qrr also helps to reduce power loss by providing more efficient switching. The low Qrr also helps to reduce the risk of latch-up on the drain side of the device.

The IRLZ44STRR is capable of withstanding high-current surge conditions and is reliable in high-temperature applications. It has a low on-resistance and very low gate charge, making it suitable for high-efficiency applications.It is also very cost effective and easy to use in PCB layout.

In summary, the IRLZ44STRR is a powerful and reliable single N-Channel enhancement mode Silicon Gate Power MOSFET. It is designed for high-current, high-transconductance applications such as DC/DC converters, switching power supplies, PWM switching, and synchronous buck converters. Additionally, the IRLZ44STRR features a low-angle front gate structure, a low Qrr, robust ESD protection and a low on-resistance. This makes it an excellent choice for designers who need a reliable and cost-effective solution for their applications.

The specific data is subject to PDF, and the above content is for reference