IXFH10N80P

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The IXFH10N80P is a type of a Power MOSFET, and is an analog of the IRL540. It is classed as an enhancement mode MOSFET, which makes it suitable for many different applications. It is a three-terminal device and is often used as a power switch. It is a high-voltage FET that can support a maximum continuous drain current of 12A at 70°C. The IXFH10N80P is a P-channel MOSFET with an On-state resistance of 0.07 ohms and a maximum drain-source voltage of 800V.

The IXFH10N80P is in a TO-220AB plastic package, which makes it suitable for use with through-hole boards. It provides a large safe operating area with a high current carrying capability. It provides a low Gate-Source voltage drop, which ensures low power dissipation during switching.

Applications for the IXFH10N80P include power management, motor control, and switching power supply circuits. It can be used in circuit designs as a switch, or as a regulator. The IXFH10N80P is suitable for use in high-efficiency power conversion designs, such as high-voltage DC-DC converters and other switching circuits. It is popular for use in Class D and Class D/D amplifier designs, where it is used for switching between the high-voltage and low-voltage supplies.

The IXFH10N80P operates on the principle of an insulated gate bipolar transistor (IGBT). In this type of transistor, the Gate, Drain, and Source regions are formed of a semiconductor material, usually silicon. When the Gate voltage is between the Source and Drain voltages, current can flow between the Drain and Source, and when the Gate voltage is outside of this range, current can\'t flow. The IGBT is a current-controlling device, and is demanding more frequently as its more efficient in comparison to bipolar transistors.

The IXFH10N80P has a threshold voltage of -4.5V, and a Gate-Source capacitance of 0.19pF. The maximum Gate-Source voltage is -20V, the Gate-Drain voltage is -20V, the Gate-Source voltage is -10V, and the Gate-Drain current is 8mA. The On-state resistance is 0.07 Ohm, the Rise time is 250ns, and the Turn-on delay time is 600ns. The maximum Junction-to-Case thermal resistance is 20°C/W, and the maximum Drain-Source Voltage is 800V. It is suitable for use in applications up to 200°C.

In conclusion, the IXFH10N80P is a power MOSFET suitable for use in many different applications from power management to motor control and switching power supply circuits. It is a three-terminal device, with an on-state resistance of 0.07 ohms and a maximum drain-source voltage of 800V. The IXFH10N80P operates on the principle of an insulated Gate bipolar transistor (IGBT), which when gate voltage is between source and drain voltage, current can flow between the drain and source. It is suitable for use in high-efficiency power conversion designs, such as high-voltage DC-DC converters and other switching circuits.

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