IXFH80N085 Allicdata Electronics
Allicdata Part #:

IXFH80N085-ND

Manufacturer Part#:

IXFH80N085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 85V 80A TO-247
More Detail: N-Channel 85V 80A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: IXFH80N085 datasheetIXFH80N085 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 85V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFH80N085 is a high-sided mosfet transistor designed for surface mounting. Its application can be found in power management circuits and motor control. Its structure is composed of two p-type material regions separated by a layer of n-type material and it is normally used in applications that require high side switch, current limiting, motor control, and light dimming. The IXFH80N085 is a three-terminal device and its terminals are designated as drain, gate, and source.

The working principle of the IXFH80N085 is simple. A small current will flow from the source to the drain when a voltage is applied to the gate. This current then is regulated based on the voltage applied on the gate. In this way, the IXFH80N085 can be used to control the speed, power and other parameters of a motor. Moreover, the IXFH80N085 offers better immunity to noise, EMI and other environmental disturbances compared to other transistors.

The IXFH80N085 has several key parameters that need to be considered when selecting it for a specific application. The Drain-Source Breakdown Voltage (BVDSS) is the voltage level at which the device breaks down and no more current can pass through. The Gate-Source Voltage (VGSS) is the voltage applied to the gate terminal, while the Maximum Drain Current (IDSS) is the maximum current that is able to pass through the device. The On Resistance (RDS(ON)) is the resistance of the device when the gate voltage is at its on level, while the Gate Threshold Voltage (VGS(th)) is the gate voltage at which the transistor starts conducting.

The IXFH80N085 can be used in many power supply applications that require high switching frequency, low on-resistance, low power dissipation, and high current carrying capacity. It can also be used in other low voltage applications, such as personal electronics, automobiles, home appliances and industrial control. The IXFH80N085 is widely used for low voltage load switching, power supply design, motor control and light dimming.

The IXFH80N085 is a versatile device with many benefits. It is an ideal solution for applications that require high-side switch and current limiting. Additionally, its low on-resistance and high current carrying capacity make it a perfect choice for motor control and light dimming. Its wide array of application fields and convenient working principle make the IXFH80N085 a popular choice in the market.

The specific data is subject to PDF, and the above content is for reference

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