| Allicdata Part #: | IXFH80N08-ND |
| Manufacturer Part#: |
IXFH80N08 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 80V 80A TO-247 |
| More Detail: | N-Channel 80V 80A (Tc) 300W (Tc) Through Hole TO-2... |
| DataSheet: | IXFH80N08 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXFH80N08 is a high-voltage mosfet (HVFET) with a wide range of applications and excellent performance. It is the latest generation of high-voltage, versatile and robust devices, with improved on-state performance, low on-state resistance (RDSon) and ultra-low output capacitance (COSS). It is designed to meet the demanding requirements of high frequency, high power and high current applications, including switch-mode power supplies, industrial, automotive and lighting systems, and telecom and telecom equipment.
An IXFH80N08 HVFET is an insulated-gate field-effect transistor with three terminals, referred to as the source (S), gate (G) and drain (D). The structure of the device is similar to a metal-oxide semiconductor field-effect transistor (MOSFET) except that the gate oxide is thicker, which results in a higher breakdown voltage (VGS). The device can be operated in both enhancement-mode (normally-off) and depletion-mode (normally-on). In enhancement-mode, the device is off when the gate-source voltage (VGS) is below the threshold voltage (Vth). The device is turned on by applying a positive gate-source voltage which in turn allows drain current to flow. In depletion-mode, the device is normally on and is controlled by applying a negative gate-source voltage which reduces the drain current.
The IXFH80N08 HVFET provides higher on-state performance with tighter control and on-state resistance. It also offers improved switching characteristics, fast switching speed with low switching losses and low on-state losses. It boasts an ultra-low output capacitance (COSS) which decreases switching losses, minimizes ringing, and increases system efficiency. The device is also robust and reliable, with low leakage current and gate charge.
The IXFH80N08 HVFET is suitable for many applications, including switch-mode power supply systems, industrial, automotive and lighting systems, and telecom and telecom-systems. It can also be used in dc-to-dc converters, high-efficiency DC/DC converters, arc-fault protection circuits and various other power device applications.
In summary, the IXFH80N08 HVFET is a high-voltage, versatile and robust device with improved on-state performance, low on-state resistance and ultra-low output capacitance. It offers high frequency, high power and high current capabilities, with low switching and on-state losses, and longterm reliability. It is suitable for many applications, including switch-mode power supply systems, industrial, automotive, lighting systems, and telecom and telecom-systems.
The specific data is subject to PDF, and the above content is for reference
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IXFH80N08 Datasheet/PDF