IXFH80N08 Allicdata Electronics
Allicdata Part #:

IXFH80N08-ND

Manufacturer Part#:

IXFH80N08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 80V 80A TO-247
More Detail: N-Channel 80V 80A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: IXFH80N08 datasheetIXFH80N08 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXFH80N08 is a high-voltage mosfet (HVFET) with a wide range of applications and excellent performance. It is the latest generation of high-voltage, versatile and robust devices, with improved on-state performance, low on-state resistance (RDSon) and ultra-low output capacitance (COSS). It is designed to meet the demanding requirements of high frequency, high power and high current applications, including switch-mode power supplies, industrial, automotive and lighting systems, and telecom and telecom equipment.

An IXFH80N08 HVFET is an insulated-gate field-effect transistor with three terminals, referred to as the source (S), gate (G) and drain (D). The structure of the device is similar to a metal-oxide semiconductor field-effect transistor (MOSFET) except that the gate oxide is thicker, which results in a higher breakdown voltage (VGS). The device can be operated in both enhancement-mode (normally-off) and depletion-mode (normally-on). In enhancement-mode, the device is off when the gate-source voltage (VGS) is below the threshold voltage (Vth). The device is turned on by applying a positive gate-source voltage which in turn allows drain current to flow. In depletion-mode, the device is normally on and is controlled by applying a negative gate-source voltage which reduces the drain current.

The IXFH80N08 HVFET provides higher on-state performance with tighter control and on-state resistance. It also offers improved switching characteristics, fast switching speed with low switching losses and low on-state losses. It boasts an ultra-low output capacitance (COSS) which decreases switching losses, minimizes ringing, and increases system efficiency. The device is also robust and reliable, with low leakage current and gate charge.

The IXFH80N08 HVFET is suitable for many applications, including switch-mode power supply systems, industrial, automotive and lighting systems, and telecom and telecom-systems. It can also be used in dc-to-dc converters, high-efficiency DC/DC converters, arc-fault protection circuits and various other power device applications.

In summary, the IXFH80N08 HVFET is a high-voltage, versatile and robust device with improved on-state performance, low on-state resistance and ultra-low output capacitance. It offers high frequency, high power and high current capabilities, with low switching and on-state losses, and longterm reliability. It is suitable for many applications, including switch-mode power supply systems, industrial, automotive, lighting systems, and telecom and telecom-systems.

The specific data is subject to PDF, and the above content is for reference

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