IXFH24N90P Allicdata Electronics
Allicdata Part #:

IXFH24N90P-ND

Manufacturer Part#:

IXFH24N90P

Price: $ 8.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH TO-247
More Detail: N-Channel 900V 24A (Tc) 660W (Tc) Through Hole TO-...
DataSheet: IXFH24N90P datasheetIXFH24N90P Datasheet/PDF
Quantity: 1000
1 +: $ 8.05000
10 +: $ 7.80850
100 +: $ 7.64750
1000 +: $ 7.48650
10000 +: $ 7.24500
Stock 1000Can Ship Immediately
$ 8.05
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A Field-Effect Transistor (FET) is a type of transistor that can be used to control the flow of electricity by changing the voltage applied to it. The IXFH24N90P is a non-logic depletion-mode FET, specifically a N-channel depletion-mode FET with enhancement (E) characteristics, meaning that the voltage applied to the gate controls the current between the source and drain. It is an easy-to-use device, and it can be used in a variety of applications.

Application Field: The IXFH24N90P is suitable for use in a variety of circuit applications, including power supplies and DC-DC converters, switch-mode power converters, switched and regulated power supplies, pulse circuits, and audio amplifiers. It can also be used in low-power applications, such as signal detectors and mixers. Additionally, the IXFH24N90P is used in circuits that require a high density of current and low levels of power. This is often used to regulate and control the voltage on a circuit.

Working Principle: The IXFH24N90P is an enhancement-mode transistor with an N-channel enhancement, meaning that the voltage applied to the gate controls the current between the source and drain. The IXFH24N90P has an on-state resistance (RDS) of 90mΩ, and a maximum current of 24A, allowing for greater control and current capacity in the circuit. When applying a voltage to the gate, current will travel from the source to the drain, and the larger the gate voltage, the larger the current flow. The IXFH24N90P is also capable of switching frequencies up to 3MHz, allowing for fast and efficient operations.

The IXFH24N90P is an easy-to-use and reliable depletion-mode FET with a variety of applications. It is capable of withstanding high currents and low power levels, and it can be used in power converters, regulators, signal amplifiers, and other circuits. The IXFH24N90P is also capable of fast switching, allowing for quick and efficient operations. These features make the IXFH24N90P a great choice for any application that requires power control and regulation.

The specific data is subject to PDF, and the above content is for reference

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