| Allicdata Part #: | IXFH24N90P-ND |
| Manufacturer Part#: |
IXFH24N90P |
| Price: | $ 8.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH TO-247 |
| More Detail: | N-Channel 900V 24A (Tc) 660W (Tc) Through Hole TO-... |
| DataSheet: |  IXFH24N90P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 7.24794 |
| Series: | HiPerFET™, PolarP2™ |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 420 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 660W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AD (IXFH) |
| Package / Case: | TO-247-3 |
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A Field-Effect Transistor (FET) is a type of transistor that can be used to control the flow of electricity by changing the voltage applied to it. The IXFH24N90P is a non-logic depletion-mode FET, specifically a N-channel depletion-mode FET with enhancement (E) characteristics, meaning that the voltage applied to the gate controls the current between the source and drain. It is an easy-to-use device, and it can be used in a variety of applications.
Application Field: The IXFH24N90P is suitable for use in a variety of circuit applications, including power supplies and DC-DC converters, switch-mode power converters, switched and regulated power supplies, pulse circuits, and audio amplifiers. It can also be used in low-power applications, such as signal detectors and mixers. Additionally, the IXFH24N90P is used in circuits that require a high density of current and low levels of power. This is often used to regulate and control the voltage on a circuit.
Working Principle: The IXFH24N90P is an enhancement-mode transistor with an N-channel enhancement, meaning that the voltage applied to the gate controls the current between the source and drain. The IXFH24N90P has an on-state resistance (RDS) of 90mΩ, and a maximum current of 24A, allowing for greater control and current capacity in the circuit. When applying a voltage to the gate, current will travel from the source to the drain, and the larger the gate voltage, the larger the current flow. The IXFH24N90P is also capable of switching frequencies up to 3MHz, allowing for fast and efficient operations.
The IXFH24N90P is an easy-to-use and reliable depletion-mode FET with a variety of applications. It is capable of withstanding high currents and low power levels, and it can be used in power converters, regulators, signal amplifiers, and other circuits. The IXFH24N90P is also capable of fast switching, allowing for quick and efficient operations. These features make the IXFH24N90P a great choice for any application that requires power control and regulation.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
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