IXFH22N60P3 Allicdata Electronics
Allicdata Part #:

IXFH22N60P3-ND

Manufacturer Part#:

IXFH22N60P3

Price: $ 3.84
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 22A TO247
More Detail: N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFH22N60P3 datasheetIXFH22N60P3 Datasheet/PDF
Quantity: 4224
1 +: $ 3.49020
30 +: $ 2.80392
120 +: $ 2.55460
510 +: $ 2.06858
1020 +: $ 1.74460
Stock 4224Can Ship Immediately
$ 3.84
Specifications
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH22N60P3 is a type of MOSFET(Metal Oxide Semiconductor Field-Effect Transistor) developed for a specific application.

It is mainly used in consumer electronics to control the current flow and thus to provide power to small household appliances. It is also used in industrial equipment to control electric motors and other heavy machinery.

MOSFET is a type of transistor in which the electric current flows through a channel created by a semiconductor gate. The gate is usually made of silicon or other materials that can be easily shaped into a thin sheet and then integrated into electronic components. The channel is formed between the source and the drain and is usually charged with a voltage.

To understand the working principle of IXFH22N60P3, it is necessary to understand how a MOSFET device operates. To begin with, the gate receives an electrical signal, which allows electrons to pass between the source and the drain. When the voltage is applied to the gate, the electrons move from the source to the drain and create a current that can be controlled by the voltage applied to the gate. This current then controls the output of the device.

One of the key factors of IXFH22N60P3 is its low threshold voltage, which enables it to control the current flow with a relatively low amount of energy consumed. This makes IXFH22N60P3 suitable for high speed applications, as it has a fast switching speed that allows the device to be used in high speed data processing. Additionally, its low-threshold voltage provides IXFH22N60P3 with an advantage over other MOSFET devices that use higher amount of energy.

Another important factor in IXFH22N60P3 is its low on-resistance, which allows it to switch current on a very low voltage. This makes it ideal for power applications where the on-resistance is important. The low on-resistance also helps increase the efficiency of the device, as it reduces the amount of energy that is lost during operation.

In conclusion, IXFH22N60P3 is an ideal MOSFET device for consumer and industrial applications. Its low threshold voltage, low on-resistance, and fast switching speed make it the perfect choice for high speed applications where high current and efficiency are important. Furthermore, its low cost makes it an attractive option for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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