Allicdata Part #: | IXFH230N10T-ND |
Manufacturer Part#: |
IXFH230N10T |
Price: | $ 4.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 230A TO-247 |
More Detail: | N-Channel 100V 230A (Tc) 650W (Tc) Through Hole TO... |
DataSheet: | IXFH230N10T Datasheet/PDF |
Quantity: | 1000 |
90 +: | $ 3.89130 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 650W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 230A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFH230N10T application field and working principle
IXFH230N10T are a type of Field-Effect Transistors (FETs), more specifically a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFETs) that come in a single package. They are voltage-controlled transistors that have three terminals — source, drain and gate. The source and the drain receive the electrical current flowing through the transistor, while the gate acts as a switch - the source and the drain are connected when the gate is properly activated.
Application
IXFH230N10T FETs are mainly used in switching and amplification applications because they can handle a wide range of currents and voltages. For example, they can be used as voltage-controlled switches in mobile phones, computers and other electronic devices when programmed to open or close circuits.
Other applications for IXFH230N10T FETs include power switching, motor drives, low- and high-frequency amplifiers, and audio amplifiers. These devices are also used as voltage-controlled resistors in battery protection circuits, static loads and load switches.
Working Principle
IXFH230N10T FETs work on the principle of capacitance — the depletion layer of the substrate provides small capacitance that stores and transmits charge to the gate, which in turn alters the device resistance. The thicker the depletion layer, the higher the resistance, thus controlling the amount of current that flows through the transistor. In order for the current to flow within the transistor, the gate must be properly activated, thus causing the majority carriers to flow between the source and the drain.
Another way the IXFH230N10T FETs work is by controlling the electric field within the channel region, which creates a “barrier” that either keeps current from flowing or allows current to travel between the source and drain. This electric field can be manipulated by changing the gate voltage, thus altering the amount of current that flows through the transistor.
Conclusion
IXFH230N10T FETs are versatile and relatively easy to use, making them useful for a wide range of applications. They are suitable for high-power applications such as motor drives, amplifiers and power switching, as well as low-power switching in logic circuitry and battery protection circuits. Their principles of operation, based on both capacitance and electric fields, allow them to be used in a variety of ways, making them a popular choice among engineers.
The specific data is subject to PDF, and the above content is for reference
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IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
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IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
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IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
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IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
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IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
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