IXFH230N10T Allicdata Electronics
Allicdata Part #:

IXFH230N10T-ND

Manufacturer Part#:

IXFH230N10T

Price: $ 4.33
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 230A TO-247
More Detail: N-Channel 100V 230A (Tc) 650W (Tc) Through Hole TO...
DataSheet: IXFH230N10T datasheetIXFH230N10T Datasheet/PDF
Quantity: 1000
90 +: $ 3.89130
Stock 1000Can Ship Immediately
$ 4.33
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 650W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH230N10T application field and working principle

IXFH230N10T are a type of Field-Effect Transistors (FETs), more specifically a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFETs) that come in a single package. They are voltage-controlled transistors that have three terminals — source, drain and gate. The source and the drain receive the electrical current flowing through the transistor, while the gate acts as a switch - the source and the drain are connected when the gate is properly activated.

Application

IXFH230N10T FETs are mainly used in switching and amplification applications because they can handle a wide range of currents and voltages. For example, they can be used as voltage-controlled switches in mobile phones, computers and other electronic devices when programmed to open or close circuits.

Other applications for IXFH230N10T FETs include power switching, motor drives, low- and high-frequency amplifiers, and audio amplifiers. These devices are also used as voltage-controlled resistors in battery protection circuits, static loads and load switches.

Working Principle

IXFH230N10T FETs work on the principle of capacitance — the depletion layer of the substrate provides small capacitance that stores and transmits charge to the gate, which in turn alters the device resistance. The thicker the depletion layer, the higher the resistance, thus controlling the amount of current that flows through the transistor. In order for the current to flow within the transistor, the gate must be properly activated, thus causing the majority carriers to flow between the source and the drain.

Another way the IXFH230N10T FETs work is by controlling the electric field within the channel region, which creates a “barrier” that either keeps current from flowing or allows current to travel between the source and drain. This electric field can be manipulated by changing the gate voltage, thus altering the amount of current that flows through the transistor.

Conclusion

IXFH230N10T FETs are versatile and relatively easy to use, making them useful for a wide range of applications. They are suitable for high-power applications such as motor drives, amplifiers and power switching, as well as low-power switching in logic circuitry and battery protection circuits. Their principles of operation, based on both capacitance and electric fields, allow them to be used in a variety of ways, making them a popular choice among engineers.

The specific data is subject to PDF, and the above content is for reference

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