IXFH52N30P Allicdata Electronics
Allicdata Part #:

IXFH52N30P-ND

Manufacturer Part#:

IXFH52N30P

Price: $ 3.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 52A TO-247
More Detail: N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-...
DataSheet: IXFH52N30P datasheetIXFH52N30P Datasheet/PDF
Quantity: 1000
30 +: $ 3.42321
Stock 1000Can Ship Immediately
$ 3.8
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH52N30P Application Field and Working Principle

The IXFH52N30P is a low voltage, low RDS(on)mosfet designed as a single-enhancement-mode transistor for use in a variety of applications in a variety of working conditions. It is a logic level device, having an enhanced drive capability over its standard equivalent, making it better suited for applications where a large amount of power is used. It has a package size of 20A.

Application Field of IXFH52N30P

The IXFH52N30P is designed for a variety of applications, including power management for DC/DC converters, LED lighting, DC motor control, appliance and lighting controls, hot-swap power supplies, and voltage regulator modules (VRMs). The low source/drain losses and gate charge enable the efficient control of higher power currents, while the logic level drive capability makes it well suited for applications running at lower frequencies and lower voltages.

Working Principle of IXFH52N30P

The IXFH52N30P is a MOSFET, which stands for metal-oxide-semiconductor-field-effect-transistor. It operates by using an electric field to create a conductive path between its source and drain terminals. A voltage applied to the gates of the MOSFET will control the amount of current allowed to pass through. The gate also serves as an access point for the charge carriers, allowing for a smooth application of the voltage and a controlled threshold voltage. This makes MOSFET a better choice for applications that require gentle and accurate control of currents.

The IXFH52N30P specifically works according to the principle of enhancement-mode. This means that the transistor can be switched between a low-resistance state (on-state) and a high-resistance state (off-state). When the voltage on the gate exceeds the threshold voltage, the channel of the transistor opens and current flows.

Conclusion

The IXFH52N30P is a single-enhancement-mode MOSFET designed for a wide range of applications, such as power management, LED lighting, DC motor control, appliance and lighting control and voltage regulator modules. It has a low source-drain resistance and gate charge, making it able to efficiently control larger amounts of power currents, while also having the logic level drive capability that enables it to be used in applications running at lower frequencies and voltages. The working principle of this device revolves around the enhancement-mode switching property, which allows for it to be turned on and off depending on the applied voltage on its gate.

The specific data is subject to PDF, and the above content is for reference

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