IXFH14N100

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFH14N100 Application Field and Working Principle

The IXFH14N100 is a high-frequency high-voltage MOSFET (metal-oxide-semiconductor field-effect transistor) from IXYS Corporation. It is part of their IXYSHV and IXRHSV family of high-voltage silicon MOSFETs, which are designed to withstand overvoltages of up to 10,000 volts. The IXFH14N100 is a low-frequency MOSFET that can be used in a variety of applications, including power supplies, high-power amplifiers, and other high-voltage circuits.

IXFH14N100 Operational Principle

MOSFETs are four-terminal devices consisting of source (S), drain (D), gate (G), and body (B) terminals. The device’s operation is based on the principle of capacitive coupling between the gate electrode and the channel, as well as inversion of the channel region between the source and drain when a suitable voltage is applied to the gate. When a positive voltage is applied to the gate, the channel region near the gate becomes inverted and can conduct a current from the source to the drain. In this way, current can be controlled by the gate voltages.

IXFH14N100 Applications

The IXFH14N100 is well-suited for power switch and amplifier applications because of its high-frequency switching and low ON resistance capabilities. Its maximum drain-to-source voltage rating of 10,000 V makes it ideal for applications where overvoltage protection is required, such as inverters and isolated power supplies. It is also suitable for high-speed switching applications where low power dissipation is desired, such as RF switching.

The IXFH14N100 can also be used for high-temperature applications, such as automotive electronics, due to its high maximum junction temperature ratings. Its high-current capabilities make it well-suited for battery power switches and other power applications.

The IXFH14N100 is also suitable for low-noise, low-power circuits, as it can operate in temperatures down to -55°C. This makes it suitable for low-power switching applications such as logic gates, timers, and other low-power circuits. Additionally, its low-noise characteristics make it suitable for low-noise amplifiers, attenuators, and other low-noise applications.

Conclusion

The IXFH14N100 is a high-voltage, high-frequency MOSFET from IXYS Corporation with numerous applications. It has low gate charge, low gate-to-drain capacitance, and high frequency switching, making it suitable for use in high-frequency switching and power applications, as well as for high-voltage and high-temperature applications. Additionally, its low-noise characteristics make it suitable for low-noise amplifiers, attenuators, and other low-noise circuits. The IXFH14N100 is an excellent choice for applications where overvoltage protection is needed, high-frequency switching is desired, or high-temperature operation is required.

The specific data is subject to PDF, and the above content is for reference