IXFH15N100Q3 Allicdata Electronics
Allicdata Part #:

IXFH15N100Q3-ND

Manufacturer Part#:

IXFH15N100Q3

Price: $ 9.40
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 15A TO-247
More Detail: N-Channel 1000V 15A (Tc) 690W (Tc) Through Hole TO...
DataSheet: IXFH15N100Q3 datasheetIXFH15N100Q3 Datasheet/PDF
Quantity: 138
1 +: $ 8.54280
30 +: $ 7.18410
120 +: $ 6.60164
510 +: $ 5.63081
Stock 138Can Ship Immediately
$ 9.4
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 690W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH15N100Q3 is a type of field effect transistor (FET) that is commonly used in electronic circuits to control current, voltage and resistance. It is one of the leading FETs in the electronics industry due to its high performance and reliability. This article will discuss the application field and working principle of the IXFH15N100Q3.

Applications in Electronics

IXFH15N100Q3 is most often used as a power switch in inverters, switching power supplies, and other power conversion applications. It can handle up to 900V VGS, allowing it to switch large currents. It is suitable for use in extreme high-frequency applications up to 3GHz, with low switching losses and controlled on-resistance for better efficiency. Other typical applications include regulation, voltage control, and current regulation.

The IXFH15N100Q3 is particularly suitable for applications where high efficiency is a priority, such as power converters used in solar energy systems and hybrid electric vehicles. It is also suited for use in Class-D (switch-mode) audio amplifiers due to its low RDS(on) and low gate charge. In addition, the IXFH15N100Q3 can be used in low voltage DC-DC converters, high power motor drives, and class-AB audio amplifiers.

Working Principle

The IXFH15N100Q3 is a N-Channel MOSFET with a wide VDSS range, making it suitable for use in high-voltage applications. It works by allowing or blocking the flow of electrons through it in order to control current, voltage, and resistance. The IXFH15N100Q3 has a high-voltage gate which is used to control the flow of electrons through the FET. When a positive voltage is applied to the gate, electrons will be forced away from the gate, allowing the current to flow from the drain to the source. Conversely, when a negative voltage is applied to the gate, the electrons are attracted to the gate, blocking the current flow from the drain to the source.

The IXFH15N100Q3 has a low on-resistance, which means that the voltage drop across the FET when it is switched on is very low. This helps to reduce energy losses during switching and allows for high efficiency. In addition, the IXFH15N100Q3 has a low gate charge, which helps to reduce the time required to switch the FET on or off. This allows for faster switching speeds and higher frequency applications.

Conclusion

IXFH15N100Q3 is a high-performance FET with a wide range of applications in inverters, switching power supplies, and other power conversion applications. Its low on-resistance and low gate charge make it suitable for use in high efficiency applications. In addition, it is suitable for use in Class-D and Class-AB audio amplifiers and high power motor drives. The IXFH15N100Q3 works by allowing or blocking the flow of electrons through it in order to control current, voltage, and resistance, making it a versatile and reliable FET for many applications.

The specific data is subject to PDF, and the above content is for reference

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