| Allicdata Part #: | IXFH15N100-ND |
| Manufacturer Part#: |
IXFH15N100 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 15A TO-247 |
| More Detail: | N-Channel 1000V 15A (Tc) 360W (Tc) Through Hole TO... |
| DataSheet: |  IXFH15N100 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 700 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXFH15N100 is a type of field effect transistor (FET) called an enhancement mode Insulated Gate Field Effect Transistor (IGFET). It is a single drain FET that can be used for a variety of applications, from switching to voltage regulation. In this article we will discuss the application field and working principle of the IXFH15N100.
The IXFH15N100 is a vertical power MOSFET specifically designed for power management applications. This FET can be used in a variety of applications, including DC-DC converters, power amplifiers, power distribution, and power switching. The IXFH15N100 has a Drain-Source Voltage rating of 100V and a Drain-Source Current rating of 15A, making it an ideal solution for applications that require high current, high power, and low on-resistance.
The working principle of the IXFH15N100 is based on the principle of a field effect transistor. As a FET, the IXFH15N100 relies on the electric field generated between the source and drain to control the flow of current. This electric field is generated when a gate voltage is applied to the gate of the FET. When the gate voltage is applied, the electric field is increased and current is allowed to flow from the source to the drain. Conversely, when the gate voltage is decreased, the electric field is decreased and current is prevented from flowing from the source to the drain. This enables the IXFH15N100 to be used as a switch, allowing current to flow only when the gate voltage is applied.
In addition to being used as a switch, the IXFH15N100 can also be used as a voltage regulator. If a gate voltage is applied that is lower than the source voltage, the IXFH15N100 will act as a resistor and limit the flow of current. This means that the IXFH15N100 can be used to regulate the voltage across a device, even when the source voltage changes. This makes the IXFH15N100 ideal for applications where power supply regulation is needed.
The IXFH15N100 is a versatile and powerful FET, capable of being used for a variety of applications. Its ability to handle high current and high power, combined with its low on-resistance and its ability to act as both a switch and a voltage regulator make it an ideal solution for power management applications. From DC-DC converters to power amplifiers, the IXFH15N100 is a FET that can be relied upon to get the job done.
The specific data is subject to PDF, and the above content is for reference
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