IXFH60N65X2

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The IXFH60N65X2 is a part of a line of field effect transistors (FETs) known as MetalfaceT MOSFETs, produced by Infineon Technologies AG. It is a single n-channel FET with a “trench cell structure” that is designed for use with high-current motor control applications. The IXFH60N65X2 can handle continuous drain currents of up to 60 A with a peak drain-source voltage of 600 V, providing a simple and efficient way to control up to 20-kW motor drives.

These FETs are designed for a wide range of applications including automotive, industrial, and other high-power motor control systems. The IXFH60N65X2 is particularly suitable for regenerative inverter and converter applications, offering a fast switching frequency, high voltage capability, and a low on-resistance of 0.6 ohms. These characteristics make them well-suited for applications such as motor control, high-power switching, motion control systems, and photovoltaic inverters.

The IXFH60N65X2 is a single n-channel FET with a “trench cell structure”. This technology helps to reduce losses and optimise the power density when operating at high frequencies. Additionally, the low gate charge and low gate resistance of this FET make it suitable for switching applications. It can handle drain source voltages of up to 600V and continuous drain currents of up to 60A. The IXFH60N65X2 also offers a low on-resistance of 0.6 ohms and a fast switching frequency of up to 8MHz, making it an ideal choice for high-power switching and motor control applications.

The IXFH60N65X2 also features an integrated reversed diode, which can save space and cost in low to medium power motor control applications, eliminating the need for external fast-recovery diodes. The IXFH60N65X2 also offers improved thermal performance, making it well-suited for use in high-temperature environments. This FET is suitable for operation in temperatures of up to 150°C, providing a simple and efficient solution for applications with high power losses.

The working principle of the IXFH60N65X2 FET is based on the principle of modulation. When a gate pulse is applied to the FET, the voltage between the drain and source terminals alters, allowing current to flow in two directions. When a positive voltage is applied to the gate, the drain-to-source resistance decreases, allowing the current to flow from the drain to the source. When a negative voltage is applied to the gate, the resistance increases, blocking the flow of current from the drain to the source.

In conclusion, the IXFH60N65X2 is a single n-channel MOSFET designed for high-current motor control operations. This FET can handle drain source voltages of up to 600V and continuous drain currents of up to 60A, and has a low on-resistance of 0.6 ohms and a fast switching frequency of up to 8MHz, making it ideal for applications such as motor control, high-power switching, motion control systems, and photovoltaic inverters.

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