IXFH270N06T3 Allicdata Electronics
Allicdata Part #:

IXFH270N06T3-ND

Manufacturer Part#:

IXFH270N06T3

Price: $ 4.46
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 60V/270A TRENCHT3 HIPERFET MOSFE
More Detail: N-Channel 60V 270A (Tc) 480W (Tc) Through Hole TO-...
DataSheet: IXFH270N06T3 datasheetIXFH270N06T3 Datasheet/PDF
Quantity: 139
1 +: $ 4.05720
30 +: $ 3.26025
120 +: $ 2.97045
510 +: $ 2.40534
1020 +: $ 2.02860
Stock 139Can Ship Immediately
$ 4.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HiperFET™, TrenchT3™
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH270N06T3 is a vertical MOSFET transistor, also known as an insulated-gate field-effect transistor (IGFET). It is designed to be general-purpose and offer high-efficiency switching, ideal for power supply and DC motor control applications. This transistor is typically used for bi-directional carder switching applications, such as speed control for DC motors or for the power switching of other devices. It can also be used for general-purpose transistor applications.

This MOSFET offers high speed switching, with a maximum operating frequency of up to 100kHz. The on-resistance of the IXFH270N06T3 is extremely low, making it ideal for high current applications. Additionally, the device features a wide range of gate voltages, from -20V to 80V. This makes it compatible with a wide range of systems.

The device consists of two p-type channels between two n-type gates. The source and drain terminals of the device are connected to the gate electrodes. A gate voltage applied between the gate and source electrodes control the current flow between the source and drain electrodes. When the gate voltage is greater than the source voltage, the channel will be ‘on’, allowing current to flow. When the gate voltage is less than the source voltage, the channel will be ‘off’, preventing current from flowing.

The IXFH270N06T3 MOSFET is capable of dissipating hundreds of watts of power without any problems. It is also suitable for low- to medium-power applications, and is a commonly used device in industrial control systems. This MOSFET is also designed to be compatible with most DC motor control systems, and is commonly used in motor speed and power control circuits, as well as in power switching applications.

The IXFH270N06T3 is a versatile and reliable transistor, making it a great choice for a variety of applications. Its low on-resistance and wide range of gate voltages make it an ideal choice for high-current applications, as well as for general-purpose transistor applications. Additionally, the device is capable of dissipating large amounts of power, making it suitable for many industrial and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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