IXFH9N80 Allicdata Electronics
Allicdata Part #:

IXFH9N80-ND

Manufacturer Part#:

IXFH9N80

Price: $ 6.97
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 9A TO-247
More Detail: N-Channel 800V 9A (Tc) 180W (Tc) Through Hole TO-2...
DataSheet: IXFH9N80 datasheetIXFH9N80 Datasheet/PDF
Quantity: 3
1 +: $ 6.33780
30 +: $ 5.19834
120 +: $ 4.69113
510 +: $ 3.93041
Stock 3Can Ship Immediately
$ 6.97
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH9N80 is a FET transistor module, the abbreviation FET stands for field effect transistor. It is a type of transistor that uses an electronic field to control the shape and area of a conducting channel. IXFH9N80 is a single FET transistor, so its conduction is limited to a single channel, as opposed to other types of FET transistors which can have multiple channels.

The application field of IXFH9N80 is vast. This transistor can be used for power transistors, for amplifiers, for oscillators, for switching controllers, for operational amplifiers, and for signal conditioning circuits, among many other applications. It is also suitable for use in medical and military electronics.

The IXFH9N80 is a unipolar transistor, meaning it is made up of a single type of charge carrier, either electrons or holes. The current flows with only one polarity, as opposed to other types of transistor which can have both electron and hole carriers. In general, IXFH9N80 is used as an amplifier or switching device, making it ideal for applications where current needs to be amplified or switched.

The working principle of IXFH9N80 is based on the electric field effect, which is the main reason of conduction in FET transistors. This effect is achieved by the movement of electrons and holes in the channel created between the drain and the source. The amount of current that can flow through the transistor is determined by the applied electric field. The electric field causes the electrons and holes to move and increases the conductivity between the two electrodes. The electric field is also responsible for controlling the resistance of the channel, which is why IXFH9N80 is often also used as a voltage regulator.

IXFH9N80 is a very versatile transistor, and its application field is only limited by the user’s imagination. Due to its versatile nature and its ability to control current and resistances with electric fields, it is an ideal choice for many power and signal conditioner applications. It is also a very efficient and reliable transistor, which is why it is often used in medical and military electronics.

The specific data is subject to PDF, and the above content is for reference

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