IXFH96N15P Allicdata Electronics
Allicdata Part #:

IXFH96N15P-ND

Manufacturer Part#:

IXFH96N15P

Price: $ 3.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 96A TO-247
More Detail: N-Channel 150V 96A (Tc) 480W (Tc) Through Hole TO-...
DataSheet: IXFH96N15P datasheetIXFH96N15P Datasheet/PDF
Quantity: 1000
1 +: $ 3.80000
10 +: $ 3.68600
100 +: $ 3.61000
1000 +: $ 3.53400
10000 +: $ 3.42000
Stock 1000Can Ship Immediately
$ 3.8
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH96N15P is a vertical field effect transistor (FET) of the MOSFET type, and specifically is a type of n-channel FET. It is a component primarily used in power electronics applications, and performs the function of controlling a high-power current using a low power control signal.

The IXFH96N15P is a type of MOSFET device, the abbreviation of which stands for metal–oxide–semiconductor field-effect transistor. It is composed of various elements such as a source, a gate and a drain, that control the flow of current using a control signal. It is widely used as an electronic switch in many applications and has many advantages, such as having low output impedance, fast switching speed, low power consumption, and long lifetime. Additionally, the IXFH96N15P can be used in both small and large power applications, and the power range is wide enough to address a variety of needs.

The IXFH96N15P has some important features that make it an ideal choice for power electronics applications. First, it has a low gate-source threshold voltage, which reduces the amount of current required for switching, and increases the power efficiency. Additionally, it has a fast response time, which means it can be used for rapidly switching applications. Finally, it has a low power dissipation rate, and therefore can be used for energy-saving applications.

The working principle of the IXFH96N15P is straightforward. When an input signal is applied to the gate of the transistor, the MOSFET transistor turns on, allowing current to flow from the source to the drain. When the input signal is removed, the MOSFET transistor turns off, and no current can pass from the source to the drain. This type of transistor is very useful for controlling high power current with a low power control signal.

In conclusion, the IXFH96N15P is a type of vertical n-channel MOSFET transistor, which has a wide range of applications in power electronics. It has a low gate-source threshold voltage, fast response time, low power dissipation rate, and a long lifetime. It works by using an input signal at the gate to turn on the transistor, allowing current to flow from the source to the drain. This makes it ideal for applications that require fast switching, energy efficiency, and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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