IXFH16N50P Allicdata Electronics
Allicdata Part #:

IXFH16N50P-ND

Manufacturer Part#:

IXFH16N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 16A TO-247
More Detail: N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXFH16N50P datasheetIXFH16N50P Datasheet/PDF
Quantity: 140
Stock 140Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH16N50P is an N-channel MOSFET that is part of a large family of high-power integrated MOSFETs dedicated to reducing heat and power losses in high-powered applications. The IXFH16N50P has been designed to be robust and reliable and to operate in extreme conditions with peak currents up to 16A, which is why it has become a popular option for many energy-related industries. This article will explain the application field and working principle of this device.

Applications

The IXFH16N50P can be used in a variety of fields, including motors, power supplies, robotics, solar inverters and more. Its high performance and reliability make it the preferred choice for high power applications. Beyond its strong performance capabilities, the IXFH16N50P also offers low power losses, which can lead to improved fuel efficiency and lower operating costs. In addition, its low gate charge reduces turn-on and turn-off times and helps reduce system power consumption. This makes it an ideal choice for controlling medium to high power loads.

Working Principle

The IXFH16N50P is an N-channel MOSFET, meaning that it has two terminals, source and drain, and the gate. The gate is controlled by a voltage signal applied to it, which determines the electrical current that passes through the device. When the gate voltage is low, the MOSFET is said to be in its “OFF” state and no current will flow. When the gate voltage is raised above the threshold voltage, the device turns “ON” and current starts to flow from the source to the drain. This ability to control the flow of current with a voltage signal is the key principle behind the operation of MOSFETs.

The IXFH16N50P is also designed with special features such as fast switching, low on-state resistance and low gate charge, which make it ideal for applications that require quick, high-current switching. It is also designed for low leakage mode operation, meaning that it can be used to control high-power output in low power applications such as portable devices or automotive electronics.

Conclusion

The IXFH16N50P is a high-performance N-channel MOSFET that has become a popular option for many high-power applications. It offers low power losses, fast switching capabilities and low gate charge, which make it an ideal choice for controlling medium to high power loads. It is designed to be robust and reliable and to operate in extreme conditions with peak currents up to 16A. By understanding the application field and the working principle of the IXFH16N50P, engineers and developers can be sure that their projects are consistently meeting their requirements.

The specific data is subject to PDF, and the above content is for reference

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