IXFH4N100Q Allicdata Electronics
Allicdata Part #:

IXFH4N100Q-ND

Manufacturer Part#:

IXFH4N100Q

Price: $ 4.66
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 4A TO-247AD
More Detail: N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: IXFH4N100Q datasheetIXFH4N100Q Datasheet/PDF
Quantity: 1000
30 +: $ 4.18824
Stock 1000Can Ship Immediately
$ 4.66
Specifications
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH4N100Q is a n-channel enhancement mode Power MOSFET manufactured by IXYS Corporation. This MOSFET is capable of operating with a maximum drain-source voltage of 100V and a maximum Drain current of 13A. It is a uni-polar device that has an extremely low 0.01 ohm resistance. The IXFH4N100Q is a fully-ruggedized, advanced Power MOSFET which is designed specifically to provide higher levels of power protection, efficiency and control in critical applications such as industrial and telecommunications.

The IXFH4N100Q is designed to be used in a variety of applications. It is most commonly used in push-pull switching applications, such as power supplies and motor drives. It can also be used in bridge circuits and converters, as well as in high-frequency switching circuits. In addition, it is often used in applications that require a low on-state resistance, such as H-bridge circuits, condenser fan motors and indirect LED lighting.

The working principle of the IXFH4N100Q is based on the basic operation of a MOSFET, which is a voltage-controlled switch. MOSFETs use the Gate-Source and Drain-Source voltages to control the flow of electrons from the source to the drain. When a voltage is applied to the Gate electrode, it creates an electric field that forces the electrons to flow through the channel. The amount of current that can flow through the MOSFET is determined by the size of the electric field, which is determined by the Gate-Source voltage and the size of the drain-to-source voltage. Since the IXFH4N100Q is an enhancement mode MOSFET, it operates with a Gate-Source voltage of less than 4.5V, which ensures that it can operate with a low amount of power.

The IXFH4N100Q is an ideal choice for applications that require high power efficiency, fast switching times and superior protection. Its low on-state resistance ensures that it can route power quickly and efficiently, while its rugged design ensures long-term reliability. The IXFH4N100Q is used widely in a variety of applications and is a great choice for those who are looking for a reliable and efficient Power MOSFET for their applications.

The specific data is subject to PDF, and the above content is for reference

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