| Allicdata Part #: | IXFH20N60Q-ND |
| Manufacturer Part#: |
IXFH20N60Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 20A TO-247 |
| More Detail: | N-Channel 600V 20A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXFH20N60Q Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXFH20N60Q is a high-voltage MOSFET transistor from IXYS. It is a highly integrated MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a Vds rating of 600V and an Id of 20A. It is housed in a TO-220 package and is typically used for power switching and motor control applications. It is a single-channel Field Effect Transistor (FET) with a low on-resistance and an excellent switching performance.
The IXFH20N60Q has a maximum Drain–Source Voltage (Vds) of 600V and a Drain-Source current (Id) of 20A. It also has a relatively low on-resistance, making it suitable for high-power applications. It is designed to operate at very high frequency switching speeds with extremely low EMI. It also has a low threshold voltage and a low gate charge, making it suitable for high-frequency pulse modulation applications.
The application field of the IXFH20N60Q is extremely broad and can be used in various applications such as motor control, power converters, power switching, and power supply control. Its low on-resistance and switching performance also make it suitable for use in high-power applications, including high-power switching, power inverters, and more. It can also be used in rectification and motor drives.
The working principle of the IXFH20N60Q is similar to that of other FETs. It has a gate electrode which is used to control the flow of current between the source and the drain. The gate electrode is under the control of an external voltage or current, which when applied will cause the transistor to turn on and off. When the gate voltage is applied, current flows from the source to the drain, causing the device to turn on. When the voltage is removed, current flow is halted and the device is turned off. By modulating the voltage applied to the gate, the transistor can be used to regulate and control the flow of current.
The IXFH20N60Q is an extremely versatile device and is used in a wide range of applications from motor control to power switching to rectification and more. Its low on-resistance and excellent switching performance make it an ideal solution for high power applications. Its wide range of applications makes it a popular choice among designers and engineers.
The specific data is subject to PDF, and the above content is for reference
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