IXFH13N80

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IXFH13N80 is a N-channel power MOSFET, which uses the single-end structure. It is produced by International Rectifier, a global supplier of power management solutions. The IXFH13N80 has a wide range of applications, and a wide range of working principles.

Applications of IXFH13N80

The IXFH13N80 is a highly advanced power MOSFET that offers exceptional performance for high power dissipation and very low on resistance. It is suitable for switching and amplifier applications, as well as for driving high-power inductive and capacitive loads. It can be used for DC/DC converters, motor drives, and uninterruptible power supplies.

In addition, IXFH13N80 also offers excellent thermal performance and high efficiency. It can be used in high-temperature applications, such as in automotive or industrial equipment. Moreover, it is fully compatible with standard logic ICs, so it can be used in applications where logic ICs are employed.

Working Principle of IXFH13N80

The IXFH13N80 is based on the N-channel power MOSFET structure. The working principle is based on the principle of operation of a MOSFET. A MOSFET is the most efficient type of transistor for power transfer, as it has a low on-state resistance and high drain current capacity.

The IXFH13N80 has a special gate oxide which allows it to achieve maximum performance at higher temperatures. This structure results in improved switching characteristics and low on-state resistance. The IXFH13N80 has an ESD protection of up to 8 KV which makes it highly reliable.

A single-end structure is employed in the IXFH13N80, which ensures that the device has the capability to switch between the Source and Drain. The drain current is in a much larger ratio than that of a two-terminal device, and this makes it ideal for high power applications. Furthermore, the IXFH13N80 has a body-diode which helps to reduce reverse conduction current.

In addition, the IXFH13N80 is equipped with a thermal shutdown circuit which protects the device from thermal overload. This feature helps to maintain the reliability and performance of the device, even in extreme temperatures. The device is also designed to have lower power losses, which ensures high efficiency.

Conclusion

The IXFH13N80 is an advanced N-channel power MOSFET, which is suitable for high power applications and for driving high-power inductive and capacitive loads. It offers excellent performance and reliability, thanks to its low on-state resistance, high drain current capacity, ESD protection, and thermal shutdown circuit. The IXFH13N80 is ideal for switching and amplifier applications, as well as for DC/DC converters, motor drives, and uninterruptible power supplies.

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