IXFH120N25T

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The IXFH120N25T FET is a common power MOSFET that is used in a variety of applications where high efficiency and reliable operation are required. It is a N-channel, depletion-mode MOSFET capable of delivering current from the source to the drain. The IXFH120N25T has a 25W maximum power dissipation and a 40V maximum drain source voltage.

The IXFH120N25T is a MOSFET because it is a field effect transistor. Unlike bipolars, FETs have a gate, drain and source, and the gate is a voltage controlled voltage source; meaning as the voltage on the gate increases, the current through the transcendence increases, and vice versa. This allows the transistors to control the current and voltages in the circuit, and that’s why they are frequently used in many electronic designs.

The IXFH120N25T MOSFET has an input capacitance of 510 pF, a maximum drain-source on-state resistance of 4.20 Ohms and a safe operating temperature between -55°C and 150°C. Its maximum gate source voltage is +/- 20 volts. This MOSFET also has an RDS (on) at 25°C of 0.042 Ohm and a rise time of 22ns.

The IXFH120N25T is mainly used for power switching and amplification purposes. Its depletion-mode operation enables it to act as an amplifier, allowing it to amplify signals with very low-frequency or wide bandwidths. It is also used to control power in circuits that require high speed switching, such as SMPS applications. Its low gate-source capacitance and good thermal characteristics makes it a great choice for fast switching applications.

The IXFH120N25T works by exploiting the depletion of electrons within the transistor channel. When the gate is left open, no potential is applied to the channel, leaving it depleted of electrons. When a positive voltage is applied to the gate, the depletion is increased, making it difficult for current to pass through the channel. When a negative voltage is applied, the depletion decreases and the channel becomes available for current to flow, effectively switching the transistor on. When current passes through the channel, some of it is dissipated as heat, which is why the IXFH120N25T has a maximum power dissipation of 25W.

The IXFH120N25T is an excellent choice for power switching and amplification applications, as it is both reliable and efficient. Its low gate-source capacitance and fast switching times make it ideal for higher frequency circuits, while its wide operating temperature range and large power dissipation enable it to work in a variety of environments. Applications that use the IXFH120N25T include dc-dc converter circuits, motor controls, audio amplifiers, LED drivers and other power management applications.

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