| Allicdata Part #: | IXFH12N120P-ND |
| Manufacturer Part#: |
IXFH12N120P |
| Price: | $ 7.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 12A TO-247 |
| More Detail: | N-Channel 1200V 12A (Tc) 543W (Tc) Through Hole TO... |
| DataSheet: |  IXFH12N120P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 7.92000 |
| 10 +: | $ 7.68240 |
| 100 +: | $ 7.52400 |
| 1000 +: | $ 7.36560 |
| 10000 +: | $ 7.12800 |
| Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 543W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
| Series: | HiPerFET™, PolarP2™ |
| Rds On (Max) @ Id, Vgs: | 1.35 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFH12N120P is a type of Insulated Gate Bipolar Transistor (IGBT) which was developed for power management in electronic devices such as switching power supplies, automotive applications, motor control and more. The IXFH12N120P is a vertical power MOSFET device which can support current up to a maximum of 12A and voltage up to 1200V. The device consists of an N-channel MOSFET with a built-in insulated gate bipolar transistor (IGBT). The device is designed to reduce conduction losses, improve overall efficiency, and provide lower power dissipation.
The IXFH12N120P has an integral N-channel MOSFET and an insulated gate bipolar transistor (IGBT) both of which are useful in many different applications. The N-channel MOSFET is made up of an integrated gate dielectric layer, a normally-off N-channel MOSFET, and an effective gate electrode. The insulated gate bipolar transistor (IGBT) is made of a semiconductor material such as silicon and a gate-controlled diode. The gate-controlled diode acts as a selective switch for the N-channel MOSFET when a voltage is applied to the gate.
The IXFH12N120P is a popular device because it has a built-in, highly reliable and efficient insulation. This insulation ensures that the device can be used in a wide range of applications without any risk of thermal runaway or device breakdown. The N-channel MOSFET of the IXFH12N120P can be used at high load currents and high load voltages with relatively low conduction losses. The insulation of the gate dielectric layer helps to reduce gate leakage.
The IXFH12N120P is used in many power switching applications. The device can be used to control high power devices such as motors, solenoids and transformers. The IXFH12N120P can also be used in AC or DC switching power supplies. The device also has a low switching threshold voltage and a low turn-off delay time, making it ideal for high speed switching applications.
The device is also suitable for motor drives, solar inverters, and industrial automation. The IXFH12N120P is also capable of handling repetitive switching applications and wide input voltage ranges. The device has low EMI noise levels and safeguards against power cycle disturbances that are common in applications with frequent switching operations.
In conclusion, the IXFH12N120P is a power MOSFET device which consists of an N-channel MOSFET and an insulated gate bipolar transistor (IGBT). The device has a low turn-off delay time, low switching threshold voltage, and high current handling capabilities. The IXFH12N120P is used for high power control applications such as motor control, switching power supplies, AC or DC control, and solar inverters. Its integral N-channel MOSFET and insulated gate bipolar transistor (IGBT) make it a highly reliable device suitable for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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