IXFH130N15X3

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The IXFH130N15X3 is a N-Channel DMOS Field Effect Transistor (FET) designed specifically for power switching applications. Produced by IXYS Corporation, it is a high voltage (Vds = 600 V), low RDS(on) (15 mΩ) discrete power MOs FET. It also features fast switching capability and due to its DMOS construction, the IXDH130N15X3 is protected from ESD damage up to 6 KV. This makes it an ideal choice for high power applications.

This type of transistor is most commonly used for switching applications, such as in high voltage power supplies, motor drives, and motor control circuits. Due to its ability to quickly switch, it is also used in circuit applications to limit current, regulate voltage, and provide voltage boost. Additionally, it is used in communications and high speed logic circuits for switching, amplification, and signal switching.

The IXFH130N15X3 is designed to work across a wide range of temperatures, up to 150°C, making it appropriate for use in harsh environments. It combines low on-resistance and low gate charge, making it a very efficient switch. Additionally, it has an ESD tolerance to 6 KV, in which the device remains operational after the electric shock, making it a good choice for applications that require ESD protection.

To achieve its low on-resistance (15 mΩ) and fast switching capability, the IXFH130N15X3 relies on its internal structure. Its construction consists of a source, a drain, and a ‘floating’ gate. The source and drain are the connection points of the device between D and S of the circuit, while the floating gate works as a ‘capacitor’ to form a dielectric layer, thus preventing electric current from flowing between D and S. By using a signal (gate signal) to control the voltage across the gate, the dielectric layer can be regulated, and the electric current between Drain and Source can be regulated. It is this signal which determines the on/off state of the device and it is this signal which helps provide fast switching capability.

In summary, the IXFH130N15X3 is a power-switching FET which features a low on-resistance (15 mΩ) and a high voltage rating (600 V Vds); it is designed to work across a wide range of temperatures, up to 150°C; and due to its DMOS construction, it is resistant to electrostatic discharge (ESD) damage up to 6 KV. It is a great choice for high power applications, such as power supplies, motor drives and control circuits, as well as communications and high speed logic circuits.

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