IXFH15N100P Allicdata Electronics
Allicdata Part #:

IXFH15N100P-ND

Manufacturer Part#:

IXFH15N100P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 15A TO-247
More Detail: N-Channel 1000V 15A (Tc) 543W (Tc) Through Hole TO...
DataSheet: IXFH15N100P datasheetIXFH15N100P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 543W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are the most commercially available and widely used type of transistor today. IXFH15N100P is a type of MOSFET which is specifically designed for a range of applications. This article will provide an overview of IXFH15N100P’s application field and working principle.

IXFH15N100P is a N-Channel power MOSFET, which is widely used in a variety of applications ranging from consumer electronics and low voltage industrial devices, to advanced digital control circuits and high voltage power switching. Its 100V drain-source voltage rating is suited for controlling various devices and circuits in both AC or DC conditions. This transistor is also widely used in power switching applications such as motor drivers, HVAC systems, and solar inverters. This wide range of applications is due to IXFH15N100P’s low on-state resistance and its low gate-to-drain charge, which make it an ideal choice for high-efficiency switching power supplies.

IXFH15N100P also has excellent performance in terms of switching speed and reliability. It is capable of switching at high speeds with a low gate-to-source voltage, and can work reliably in harsh environments with a wide temperature range. The transistor’s low gate-to-stress diode reverse recovery will also help to prevent voltage spikes and protect the device from failure.

The working principle of IXFH15N100P is quite simple. It is a four-terminal device consisting of a gate, a drain, a source, and a body (or substrate). The gate creates an electric field which controls the conductivity of the channel between the source and drain. When a positive voltage is applied to the gate, it will create an electric field which then attracts electrons in the MOSFET’s channel. This will cause the MOSFET to conduct current from the source to the drain, turning it on. When the voltage to the gate is removed, the electric field will dissipate and the MOSFET will turn off.

In conclusion, IXFH15N100P is an excellent choice for a wide range of applications due to its low on-state resistance, high switching speed and reliability, and wide temperature range. The transistor’s applications range from consumer electronics and low voltage industrial devices, to advanced digital control circuits and high voltage power switching. With a simple and relatively reliable working principle, IXFH15N100P is a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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