
Allicdata Part #: | IXFH15N100P-ND |
Manufacturer Part#: |
IXFH15N100P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 15A TO-247 |
More Detail: | N-Channel 1000V 15A (Tc) 543W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 543W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5140pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 97nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 760 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are the most commercially available and widely used type of transistor today. IXFH15N100P is a type of MOSFET which is specifically designed for a range of applications. This article will provide an overview of IXFH15N100P’s application field and working principle.
IXFH15N100P is a N-Channel power MOSFET, which is widely used in a variety of applications ranging from consumer electronics and low voltage industrial devices, to advanced digital control circuits and high voltage power switching. Its 100V drain-source voltage rating is suited for controlling various devices and circuits in both AC or DC conditions. This transistor is also widely used in power switching applications such as motor drivers, HVAC systems, and solar inverters. This wide range of applications is due to IXFH15N100P’s low on-state resistance and its low gate-to-drain charge, which make it an ideal choice for high-efficiency switching power supplies.
IXFH15N100P also has excellent performance in terms of switching speed and reliability. It is capable of switching at high speeds with a low gate-to-source voltage, and can work reliably in harsh environments with a wide temperature range. The transistor’s low gate-to-stress diode reverse recovery will also help to prevent voltage spikes and protect the device from failure.
The working principle of IXFH15N100P is quite simple. It is a four-terminal device consisting of a gate, a drain, a source, and a body (or substrate). The gate creates an electric field which controls the conductivity of the channel between the source and drain. When a positive voltage is applied to the gate, it will create an electric field which then attracts electrons in the MOSFET’s channel. This will cause the MOSFET to conduct current from the source to the drain, turning it on. When the voltage to the gate is removed, the electric field will dissipate and the MOSFET will turn off.
In conclusion, IXFH15N100P is an excellent choice for a wide range of applications due to its low on-state resistance, high switching speed and reliability, and wide temperature range. The transistor’s applications range from consumer electronics and low voltage industrial devices, to advanced digital control circuits and high voltage power switching. With a simple and relatively reliable working principle, IXFH15N100P is a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXFH80N085 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 80A TO-24... |
IXFH4N100Q | IXYS | 4.66 $ | 1000 | MOSFET N-CH 1000V 4A TO-2... |
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IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH18N60P | IXYS | 3.09 $ | 1000 | MOSFET N-CH 600V 18A TO-2... |
IXFH15N100Q3 | IXYS | 9.4 $ | 138 | MOSFET N-CH 1000V 15A TO-... |
IXFH20N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH50N50P3 | IXYS | -- | 1000 | MOSFET N-CH 500V 50A TO-2... |
IXFH76N15T2 | IXYS | 3.44 $ | 1000 | MOSFET N-CHN-Channel 150V... |
IXFH140N20X3 | IXYS | 8.33 $ | 81 | 200V/140A ULTRA JUNCTION ... |
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IXFH34N50P3 | IXYS | -- | 37 | MOSFET N-CH 500V 34A TO-2... |
IXFH13N80 | IXYS | -- | 880 | MOSFET N-CH 800V 13A TO-2... |
IXFH52N30P | IXYS | 3.8 $ | 1000 | MOSFET N-CH 300V 52A TO-2... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH230N10T | IXYS | 4.33 $ | 1000 | MOSFET N-CH 100V 230A TO-... |
IXFH80N30P3 | IXYS | 5.12 $ | 1000 | MOSFET N-CH 300V 80A TO-2... |
IXFH15N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 15A TO-... |
IXFH80N65X2 | IXYS | -- | 2427 | MOSFET N-CH 650V 80A TO-2... |
IXFH14N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO2... |
IXFH1799 | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO-247AD |
IXFH220N20X3 | IXYS | 11.8 $ | 49 | 200V/220A ULTRA JUNCTION ... |
IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH26N55Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 26A TO-2... |
IXFH16N60P3 | IXYS | 3.23 $ | 1000 | MOSFET N-CH 600V 16A TO-2... |
IXFH24N60X | IXYS | 3.73 $ | 1000 | MOSFET N-CH 600V 24A TO-2... |
IXFH12N50F | IXYS-RF | 7.04 $ | 87 | MOSFET N-CH 500V 12A TO24... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH6N100Q | IXYS | 7.43 $ | 73 | MOSFET N-CH 1000V 6A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH320N10T2 | IXYS | 9.77 $ | 2417 | MOSFET N-CH 100V 320A TO-... |
IXFH16N50P | IXYS | -- | 140 | MOSFET N-CH 500V 16A TO-2... |
IXFH220N06T3 | IXYS | 3.75 $ | 59 | 60V/220A TRENCHT3 HIPERFE... |
IXFH22N60P3 | IXYS | 3.84 $ | 4224 | MOSFET N-CH 600V 22A TO24... |
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IXFH26N50 | IXYS | -- | 200 | MOSFET N-CH 500V 26A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

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MOSFET N-CH 800V 14A TO-247N-Channel 800...

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