| Allicdata Part #: | IXFH160N15T2-ND |
| Manufacturer Part#: |
IXFH160N15T2 |
| Price: | $ 4.38 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 150V 160A TO-247 |
| More Detail: | N-Channel 150V 160A (Tc) 880W (Tc) Through Hole TO... |
| DataSheet: |  IXFH160N15T2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 4.38000 |
| 10 +: | $ 4.24860 |
| 100 +: | $ 4.16100 |
| 1000 +: | $ 4.07340 |
| 10000 +: | $ 3.94200 |
| Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 880W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 253nC @ 10V |
| Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFH160N15T2 is an N-Channel depletion mode power MOSFET with low ON-resistance and fast switching time for low-voltage power switching applications. It provides a low ON-resistance and fast switching performance with an integrated body-diode for improved efficiency.
The IXFH160N15T2 is suitable for a variety of applications such as audio amplifier, power metering, portable battery-powered applications, pulse-width modulation (PWM), low-voltage switches, automotive switching, and high-side switches.
Application Field and Working Principle
The IXFH160N15T2 is a high-performance device designed for use in low-voltage power switching applications. It has an integrated blocking diode and a high current capability. Its integrated body diode increases efficiency by eliminating the need for an external body diode. The device is designed to deliver a lower on-resistance with a fast switching time. It has an operating voltage range of 2V to 15V and an operating temperature range of -55°C to +150°C.
The working principle of the IXFH160N15T2 is simple. When the gate voltage is increased, the channel between the source and the drain will open. This creates a current path between the source and the drain. As the current, through the channel, increases the voltage between the drain and the source will decrease until it reaches a low level. This low voltage will then cause the device to switch off, and the current flow will cease.
The IXFH160N15T2 offers several advantages over other MOSFET technologies. It has an integrated body diode which eliminates the need for an external body diode. This reduces the overall power losses of the system and also provides better heat dissipation. In addition, the IXFH160N15T2 has a greater current capability which allows it to be used in higher power applications and a lower on-resistance which increases the efficiency of the system.
The IXFH160N15T2 is a good choice for use in low-voltage power switching applications due to its low on-resistance, fast switching time, and integrated body diode. It can provide improved system efficiency, lower overall power losses, and better heat dissipation. The device can be used in a variety of applications and is suitable for high current and low-voltage switching.
The specific data is subject to PDF, and the above content is for reference
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