IXFH170N25X3

Vgs(th) (Max) @ Id:	4.5V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXFH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	960W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	7.4 mOhm @ 85A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	170A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IXFH170N25X3 is a high-performance N-channel enhancement-mode Field Effect Transistor (FET). It is an ideal choice for a variety of applications, such as consumer electronics, LED lighting and smart metering. With its remarkable performance, the IXFH170N25X3 offers a great integrated solution for the modern designer. The IXFH170N25X3 utilizes advanced trench technology to enhance the electrical characteristics and offer improved switching performance compared to other single FET structures. The structure also allows for higher drain-source ON resistance and wide drain-source breakdown voltage.

IXFH170N25X3 Application Fields

The IXFH170N25X3 is designed to be used in a wide variety of applications, such as consumer electronics, automotive electronics and industrial controls. It can be used as a power switch and in high frequency switching applications. It can also be used in power converter and DC-DC converter applications. In fact, the IXFH170N25X3 is suitable for a range of applications, from low current to high current operation, so it can meet a wide range of requirements.

IXFH170N25X3 Working Principle

The IXFH170N25X3 is a N-Channel enhancement-mode Field Effect Transistor (FET) with a structure consisting of three layers. The topmost layer is the gate. The middle layer, also known as the body, or drain layer, consists of a P-channel transistor, while the bottom layer consists of an N-channel transistor. When no voltage is applied to the gate of the IXFH170N25X3, the N-channel and P-channel transistors are both blocked and no current can flow through the device. However, when the gate of the IXFH170N25X3 receives a voltage, the P-channel transistor is opened, allowing current to flow from the drain to the source. This current flow can then be used to power a device or circuit.

Conclusion

The IXFH170N25X3 is a versatile and reliable Field Effect Transistor (FET). Its advanced technology allows it to offer superior performance compared to other single FET structures. Its applications include consumer electronics, automotive electronics and industrial controls. It is suitable for applications that require both low current and high current operation. The IXFH170N25X3 FET works by allowing current flow from drain to source when a voltage is applied to the gate.

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