IXFH180N20X3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFH180N20X3 is a part of a wide family of single n-channel MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). These transistors have wide applications in electronics, from switching and amplifying to interfacing with digital circuits. The IXFH180N20X3 provides a high current rating in a small package and is well suited for portable applications. It can also be used for medium voltage power conversion, motor drive and fast switching applications.

In general MOSFETs are a type of FET (field effect transistors). FETs are three-terminal devices that exploit the current-voltage relationship present in semiconductors. They are divided into two types, which are the junction FETs (JFETs) and MOSFETs. The two types operate in a similar fashion but use different mechanisms of action. MOSFETs use the electrostatic forces generated by the potentials established between two terminals, while JFETs use the “drift” of minority carriers among two regions of a PN junction.

A single n-channel MOSFET is a three-terminal device that utilizes these electrostatic forces. It has three terminals, gate, drain and source, and the gate is the control element. A MOSFET works by the application of a voltage to the gate terminal. This voltage creates a potential difference between the drain and source terminals. This potential difference increases the conductivity of electrons from source to drain and therefore, you get a current amplifying effect.

The IXFH180N20X3 is a type of single n-channel MOSFET, specific to 20V and 180A. It has a continuous drain-to-source voltage rating of 20V and a drain current of 180A. The threshold voltage of the IXFH180N20X3 is 7V and its on-resistance is 0.11Ω. It is designed in a 6x6mm Qsop package and comes with a low RDS(on) rating.

The IXFH180N20X3 is useful in applications such as high current power conversion, motor control, fast switching and where currents of up to 180A are needed. This device can be used to create gate drives for power switches with high dv/dt, while maintaining low power dissipation.

It is also capable of delivering current fast, meaning that it can handle high frequency and high peak currents without the need for a heatsink. This makes it an ideal candidate for power switching and motor drive applications. Additionally, since it has a low RDS(on) rating, it does not require a large gate drive to switch it on. Therefore, it is well suited for battery-powered applications.

In conclusion, the IXFH180N20X3 is a type of MOSFET that is well suited for applications requiring a high current rating in a small footprint. Its low RDS(on) rating and fast switching ability make it an ideal choice for higher power applications. It can also be used for applications requiring a low gate drive, making it an ideal choice for battery-powered applications.

The specific data is subject to PDF, and the above content is for reference