Allicdata Part #: | IXFH20N100P-ND |
Manufacturer Part#: |
IXFH20N100P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 20A TO-247 |
More Detail: | N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO... |
DataSheet: | IXFH20N100P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 126nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 570 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Integrated circuit technology has enabled a range of highly advanced transistors and field-effect transistors (FETs) to be developed. The IXFH20N100P is a vertical double-sided N-channel enhancement-mode power MOSFET from IXYS Corporation. This component is a good example of the process technology involved in creating advanced power devices and is useful when used in the correct application.
The IXFH20N100P is based on a double-sided vertical structure and is capable of handling high power due to its low on-state resistance and source-drain avalanche energy rating. The component features an integral Schottky diode with a 20V reverse voltage and 100A current rating, making it suitable for circuits running at either high-voltage or high-current applications. Additionally, the IXFH20N100P has a maximum drain-source voltage of 600V and a continuous drain current rating of 50A.
The IXFH20N100P is available with three different packages; a TO-220, a TO-247, and a TO-264 package. These packages are designed to offer as much protection as possible, with the die and silicon wafer housed in a hermetically sealed package to prevent any moisture or contaminants from entering. The component has dimensions of 10.16mm x 10.16mm x 3.18mm for the TO-220 package and 15.08mm x 10.16mm x 3.4mm for the TO-247 and TO-264 packages.
The IXFH20N100P offers an internal gate-source zener diode, which offers maximum protection to the gate and keeps the gate in a switch-off state. This protection also minimises any sort of gate-charge distortion, greatly improving the reliability of the component. Additionally, the gate-source voltage rating of the IXFH20N100P is 20V, with a maximum gate-source drive capability of 18V and 50mA. This is perfect for applications where high voltage and current requirements must be met.
The IXFH20N100P has an average gate-charge of 124nC and an average input capacitance of 570pF, making it highly suitable for higher-frequency applications. The component has a thermal resistance of 0.62°C/W (both junction-to-case and junction-to-ambient) and an operating temperature range of -55°C to 175°C. It also offers an improved thermal dissipation and electrical performance compared to other devices.
The IXFH20N100P is useful in applications that require high-power or high-voltage switching, such as AC motor control, lighting, and power converters. The component offers a reliable and cost-effective solution for these applications, making it a popular choice. In these applications, the IXFH20N100P works using a basic MOSFET structure, where a voltage is applied to the gate terminal to create a conductive channel between the drain and source terminals. This allows current to flow in only one direction, allowing the IXFH20N100P to function as a switch. The IXFH20N100P also offers superior power dissipation, making it the perfect choice for high-power applications.
In conclusion, the IXFH20N100P is a high-performance vertical double-sided N-channel enhancement-mode power MOSFET designed for high-voltage and high-current applications. It offers superior power dissipation, a low on-state resistance, and a high current rating. The component is available in three different packages, which provide excellent protection and dimensional stability. Its built-in gate-source zener diode offers optimum protection, and the integral Schottky diode makes it suitable for circuits running at high-voltage or high-current. This makes the IXFH20N100P an ideal choice for applications such as AC motor control, lighting, and power converters.
The specific data is subject to PDF, and the above content is for reference
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