IXFH22N50P Allicdata Electronics
Allicdata Part #:

IXFH22N50P-ND

Manufacturer Part#:

IXFH22N50P

Price: $ 3.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 22A TO-247
More Detail: N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: IXFH22N50P datasheetIXFH22N50P Datasheet/PDF
Quantity: 44
1 +: $ 3.82000
10 +: $ 3.70540
100 +: $ 3.62900
1000 +: $ 3.55260
10000 +: $ 3.43800
Stock 44Can Ship Immediately
$ 3.82
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH22N50P is a depletion-mode field-effect transistor (FET) manufactured by IXYS Corporation. It is designed as an insulated-gate bipolar transistor (IGBT) with a p-channel enhancement-mode FET. This transistor is primarily used for switching applications and is mainly found in non-polarized power supplies.

The IXFH22N50P includes two gate terminals (G and S) and two source terminals (D and B). The gate terminal (G) is the control terminal, which controls the current flow through the source-drain path. The source terminal (S) monitors the voltage between the drain and source. The drain terminal (D) is the electrically conductive path for the current to flow. The body terminal (B) is connected to the substrate, which acts as a return path for the current.

The main feature of the IXFH22N50P is its low on-resistance. This property enables the device to switch very quickly, making it a useful transistor for switching applications. In addition, the on-resistance can be tailored to specific applications by adjusting the substrate resistance.

The IXFH22N50P works by controlling the flow of current through the drain and source terminals. When the gate voltage is low, the transistor is off, and no current flows through the source-drain path. When the gate voltage is higher than the threshold voltage, the transistor switches on, allowing current to flow through the source-drain path. The current can then be controlled by adjusting the gate voltage.

The IXFH22N50P can be used in a variety of switching applications. These include power supplies, motor control, low-frequency switching, and low-power amplifiers. This versatile device can also be used in audio applications, such as amplifiers, switches, and protection circuitry. It can also be used in logic circuits and analog circuitry.

The IXFH22N50P is a reliable and efficient device for switching applications. Its low on-resistance and high input impedance allow it to switch quickly. Its versatility allows it to be used in a variety of applications, from power supplies to audio applications. Its ability to tailor the substrate resistance makes it even more desirable for specific switching applications.

The specific data is subject to PDF, and the above content is for reference

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