IXFH30N60P

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD (IXFH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	82nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	240 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFH30N60P Application Field and Working PrincipleThe IXFH30N60P is a power MOSFET transistor that is commonly used for various power management applications. It is a single N-channel enhancement mode Mosfet transistor and is available in a through-hole or surface mount package. The IXFH30N60P has some unique characteristics that make it ideal for many types of applications. The IXFH30N60P has a low on-state resistance of 2.5mohm and a high-drain current rating of 30A. It is also able to withstand very high operating temperatures, up to 175°C, making it suitable for high-temperature applications. This power MOSFET transistor is also able to handle a wide range of input voltages, from 4.5V to 24V, with a maximum drain-source voltage of 600V. This makes it ideal for a variety of power electronics applications such as motor control and DC-DC converters. In order to understand how the IXFH30N60P works, it is important to first understand the basic principles of MOSFETs. MOSFETs are transistors that are comprised of three terminals: source, drain, and gate. The source terminal is used to inject electrical current into the transistor and the drain is used to remove the current from the transistor. The gate terminal is used to control the amount of current flowing through the transistor by controlling the voltage applied to it. When a voltage is applied to the gate, a channel is formed that allows current to flow between the source and drain terminals. The amount of current that will flow through the transistor is determined by the voltage applied to the gate. When the gate voltage is increased, the channel formed in the transistor becomes wider and more current is allowed to flow. The IXFH30N60P is a unique type of MOSFET transistor known as a "p-channel" MOSFET. This means that the channel formed in the transistor is aligned in the opposite direction of the current, allowing for an even greater degree of control over the amount of current flowing through the transistor. The IXFH30N60P can be used for various power management applications, such as motor control and DC-DC converters. It is also suitable for use in automotive applications due to its high temperature rating and wide range of input voltages. The IXFH30N60P can be used in a variety of power electronics applications due to its ability to handle high current and voltage levels. In conclusion, the IXFH30N60P is an incredibly versatile and reliable power MOSFET transistor that is capable of handling a wide range of input voltages and providing excellent performance in a wide variety of applications. It is an ideal choice for a variety of power management applications, such as motor control and DC-DC converters, and is also suitable for automotive applications due to its robust temperature range.

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