IXFH30N85X

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IXFH30N85X is a type of field effect transistor (FET) that is widely used in sophisticated digital circuits and power management systems. It is a preferred choice due to its low on-resistance, fast switching capabilities, and high current density.

IXFH30N85X belongs to a family of devices known as single, symmetrical MOSFETs, or simply single MOSFETs. This MOSFET is generally used as a power switch because it has a higher power dissipation rating than other types of FETs. It is also preferred for applications requiring high switching frequencies or very low capacitance between the gate and source terminals.

In regards to its application field, IXFH30N85X is typically used in DC-DC converters, switched-mode power supplies (SMPS), motor drivers, and in other DC switching applications. Due to its high current density and low on-resistance, it also makes a great choice for high-power applications such as battery chargers, power factor correction, HID lamp drivers, as well as other emerging energy-saving applications.

IXFH30N85X MOSFETs have a single drain source structure, instead of the traditional double drain-source configuration; the former allows for simpler connections and better thermal (dissipation) performance. The maximum drain-source blocking voltage of IXFH30N85X is 30 volts with a maximum drain-source on resistance of 8.5 ohms. There is also a maximum drain current of 22 Amps and maximum power dissipation of 75 Watts.

In terms of its working principle, IXFH30N85X MOSFETs function by using an electrical field to control the current flow between its source and drain. This is because they operate as unipolar devices that rely on the transfer of majority carriers (such as electrons or holes) across an insulated gate oxide. In short, a voltage difference between the source and the gate creates the electric field, causing the current to flow across the junction.

Unlike other types of FETs, IXFH30N85X transistors are voltage-controlled devices, meaning that the current between source and drain is dependent on the applied gate voltage. When the gate voltage is low, the current from source to drain is also low; as the gate voltage increases, so does the current flow. Moreover, these transistors are also special in that their on-state resistance (Rds) is much lower than that of other types, resulting in less power dissipation.

IXFH30N85X is a versatile and reliable FET with great performance benefits, making it a top-choice for many digital and power circuit applications. Its low on-resistance and fast switching times ensure higher efficiency and performance, while its high current density and maximum drain current provide high power delivery.

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