Allicdata Part #: | IXFH34N65X2-ND |
Manufacturer Part#: |
IXFH34N65X2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 34A TO-247 |
More Detail: | N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-... |
DataSheet: | IXFH34N65X2 Datasheet/PDF |
Quantity: | 65 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3330pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFH34N65X2 is a type of single-channel field effect transistor (FET) that is used in a variety of different applications. These FETs are commonly used in power management, as well as in switched-mode power supply (SMPS) circuits. Additionally, this FET is suitable for use in a range of signal processing applications. In order for the IXFH34N65X2 to perform correctly, the correct power level and operating temperature must be maintained. This FET can be purchased either discretely or in a package with other components.
A FET is a current controlling device, and can be thought of as a controlled resistor. It has three terminals: the source, gate, and drain. The source is connected to ground in most applications, while the gate and drain connections each have an associated voltage/current. An electrical signal applied across the gate and source controls the level of current flowing between the drain and source. When the gate is held at a fixed potential, the device behaves like an open switch, allowing current to flow freely between the drain and source.
The IXFH34N65X2 FET has an operating voltage of 130V and a maximum drain current of 4A. It has an on resistance of 0.0036 ohms and an rdson of 0.5mΩ. The FET operates in the depletion mode and is able to handle up to 35A of short circuit current. It is suitable for use in switching regulator applications, such as in SMPS circuits.
The IXFH34N65X2\'s principle of operation is fairly simple. When the voltage is applied to the gate of the FET, the drain-source current is controlled. If the gate voltage is greater than the source voltage, the FET will act as a closed switch, allowing current to flow through the drain and source. If the gate voltage is lowered, the FET will act as an open switch, limiting the current flow. The IXFH34N65X2 can be used to control the flow of current in a variety of different applications. It is usually used in switching regulator circuits, as its robust construction and low on resistance make it well-suited for use in power management and energy-saving applications.
The IXFH34N65X2 is an excellent choice for SMPS applications due to its high levels of gate switching speed and its ability to operate at elevated temperatures for extended periods. Additionally, its low on resistance means that it can switch quickly and efficiently with minimal heat dissipation. It is also a good choice for use in audio applications, as its fast switching speeds are suitable for controlling the audio signal level.
The IXFH34N65X2 is a versatile and reliable field effect transistor that is suitable for a range of different applications. Its fast switching speeds, low on resistance, and ability to handle large current loads make it an ideal choice for use in power management and SMPS circuits. By correctly setting the gate voltage, the IXFH34N65X2 can be used to control current levels for various purposes.
The specific data is subject to PDF, and the above content is for reference
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IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
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