IXFH400N075T2

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The IXFH400N075T2 belongs to the Non-Polar Gate UltraFET Family of MOSFETs from IXYS Corporation. These power MOSFETs are monolithically integrated Schottky Barrier high voltage MOSFETs from high voltage process with a gate-to-source voltage rating of 40V. With a drain-source break down voltage rating of 700V, these transistors are ideal for high voltage, high power applications.

The IXFH400N075T2 is a single N-channel enhancement-mode MOSFET that has a drive rating of 75 Amps and a maximum drain source on-state resistance of 0.0066 Ohms. This part features a low gate charge to improve gate drive speed and reduce switching losses. It is rated for operation in temperatures up to 175°C, making it suitable for use in applications that require higher power handling or increased temperature operations.

The IXFH400N075T2 is well-suited for use in high power applications such as power supplies, DC to DC converters and inverters. It can also be used in applications such as motor control, UPS systems and welding equipment. Additionally, it can be used in applications involving lighting, white goods, automotive components and telecom infrastructure.

The working principle of the IXFH400N075T2 is based on the fact that due to its N-channel architecture its output current is controlled by the gate voltage supplied at the gate terminal of the MOSFET. By increasing the gate voltage, the inversion layer at the interface of the semiconductor channel and gate oxide increases. This increases the channel conductivity and thus increases the current flow between the Drain and Source terminals. By decreasing the level of gate voltage, the inversion layer decreases causing lower current flow between Drain and Source terminals.

The IXFH400N075T2 is an optimal choice for high voltage power applications. Its high voltage rating, high current drive capability and its low gate charge make this part a great choice for applications requiring high power and temperatures up to 175°C.

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