IXFH46N65X2 Allicdata Electronics
Allicdata Part #:

IXFH46N65X2-ND

Manufacturer Part#:

IXFH46N65X2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 46A TO-247
More Detail: N-Channel 650V 46A (Tc) 660W (Tc) Through Hole TO-...
DataSheet: IXFH46N65X2 datasheetIXFH46N65X2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH46N65X2 is a range of MOSFETs, or metal oxide semiconductor field-effect transistors, belonging to the single-gate family. These small circuits are ideal for managing power levels and protecting power-handling devices against too much current, currents that a basic resistor assembly is not enough of a deterrent against. In addition, there are a range of applications unique to the IXFH46N65X2 that allow it to stand apart from other single-gate MOSFETs. Let’s look at what those applications and working principles are.

MOSFETs are distinguished by their four-layer construction, consisting of a gate, drain, and source, each with a semiconductor channel in between them. When powered, the gate allows current to flow between the drain and source and is activated with very little power — a quality in MOSFETs that makes them ideal for low-power, high-current applications.

The IXFH46N65X2 makes use of a single insulated gate to achieve an ultrafast switching time. When the gate is activated, it results in almost instantaneous transfer between the drain and source — making it ideal for power-saving applications, such as variable speed control or frequency shifters. This is due to its low threshold voltage, which can result in a switching time as low as 0.4µs.

The IXFH46N65X2 can also provide linear electronic control, allowing engineers to fine-tune the parameters of a device, providing enhanced system performance. The range also features high frequency and large drive current capabilities, making it suitable for large-scale power management applications.

The IXFH46N65X2 is suitable for a range of power management applications, due to its low power consumption, ultrafast switching time, and excellent system performance. It is an ideal solution for electrical devices that require precise control and are used in a variety of different application fields, including automotive and industrial. The IXFH46N65X2 can also be used in power supplies, such as solar or AC, as well as amplifier circuits.

In summary, the IXFH46N65X2 is an excellent example of a single-gate MOSFET, with a range of applications allowing it to be used in a variety of different scenarios. Its ultrafast switching time and low power consumption make it ideal for low-power, high-current applications, such as variable speed control or frequency shifters. In addition, the IXFH46N65X2 offers excellent system performance and can be used in a range of applications, such as automotive and industrial, as well as solar or AC power supplies and amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

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