IXFH50N60X Allicdata Electronics
Allicdata Part #:

IXFH50N60X-ND

Manufacturer Part#:

IXFH50N60X

Price: $ 5.87
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 50A TO247
More Detail: N-Channel 600V 50A (Tc) 660W (Tc) Through Hole TO-...
DataSheet: IXFH50N60X datasheetIXFH50N60X Datasheet/PDF
Quantity: 1000
60 +: $ 5.28738
Stock 1000Can Ship Immediately
$ 5.87
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH50N60X is a high-performance, high-power N-channel MOSFET system. It is designed to be used in applications that require high-voltage and high-current performance, such as switched-mode power supplies and high-efficiency DC-DC converters. In particular, the IXFH50N60X features a wide operating temperature range, excellent heat transfer characteristics, and high breakdown and source-drain voltages.

The main application field for the IXFH50N60X is in heavy-duty switching and energy management systems. It is widely used in switched-mode power supplies, DC-DC converters, motor control, and power factor correction systems. Its high voltage ratings make it suitable for applications that require high current switching and high input voltage levels.

The working principle of the IXFH50N60X is based on the MOSFET principle - Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The device consists of a semiconductor channel and two insulated gates; the gates are used to modulate the current flow through the channel. A positive voltage applied to the gate with respect to the source causes a depletion region to form at the drain side of the channel, allowing current to flow. The current flow is further controlled by the applied gate-source voltage.

The IXFH50N60X has an excellent linearity and is extremely efficient in both off-state and on-state performance. Its high speed switching and current handling capacity make it suitable for a wide range of switching applications. In addition, its low threshold voltage, low RDS (on), and high ESD ratings make it suitable for high-density operations.

The IXFH50N60X is a robust and reliable power MOSFET system with excellent thermal performance. It is designed to provide reliable operation even in extreme conditions and is EMI-immune. The device is protected against over-current, over-voltage, and over-temperature conditions, enabling it to operate safely and reliably in power conversion and management systems.

The IXFH50N60X is a very popular and reliable device for power management applications in various industries. It provides an excellent power conversion performance and is suitable for wide voltage and current range, making it one of the best choices for many critical and sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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