IXFH56N30X3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFH56N30X3 is a MOSFET in a single power package, designed for use in high power switching applications such as DC motor control and high-efficiency power conversion for industrial equipment. It is a high-performance, cost-efficient device that offers superior performance with down to 0.0005 ohm on-resistance. The device is suitable for applications requiring high overload rating, high linearity and higher available current than conventional MOSFETs. It also offers a wide operating range from -2V to 20V.

The IXFH56N30X3 is primarily used in applications such as DC motor control, switching power supplies, switching voltage regulator modules, digital power amplifiers and power management applications. It can handle high power AC/DC or DC/DC applications, providing a low-cost and efficient solution for a wide range of high-power switching applications. It is also suitable for automotive and industrial applications.

The IXFH56N30X3 is a field effect transistor (FET) with a single package. It has a unique design that offers superior performance and reliability in high power applications. The device is designed with three metal-oxide-semiconductor (MOS) transistors in series to offer improved speed and high breakdown voltage. Each of these transistors has an individual control line and is designed for high-side switching, making this device suitable for H-bridge configurations.

The IXFH56N30X3 is designed to provide low on-resistance, high current ratings and noise immunity, along with fast switching performance. It also has a high current carrying capability and heat resistivity for high-power applications. The FET also provides superior linearity, providing a smooth transfer curve between the drain-source voltage and drain current.

The working principle of the IXFH56N30X3 is based on the P-channel MOSFET enhancement process. It is a voltage-controlled switch that uses an electric field to control the current flow between drain and source. When a positive voltage is applied to the gate of the FET, it creates an electric field that increases the conductance between drain and source by attracting electrons to the gate. This enables the FET to operate in an "on" state and allows current to flow between drain and source.

When the voltage applied to the gate is decreased, the electric field weakens, causing the electrons to move away from the gate and back to the channel under the gate. This causes the FET to operate in an "off" state, preventing current from flowing between drain and source. This is the working principle of an P-channel FET and is used in the IXFH56N30X3.

The IXFH56N30X3 is a versatile MOSFET, offering many advantages in high power switching applications. It is easy to use, with low on-resistance and high voltage ratings, as well as a simple FET working principle, allowing for quick and reliable switching. The device is suitable for a wide range of high power applications, making it a preferred choice for cost-efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference