| Allicdata Part #: | IXFH58N20Q-ND |
| Manufacturer Part#: |
IXFH58N20Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 58A TO-247AD |
| More Detail: | N-Channel 200V 58A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXFH58N20Q Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 40 mOhm @ 29A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXFH58N20Q is an N-channel high-side power MOSFET from Infineon Technologies.This device is part of Infineon Technologies\' Insulated Gate Bipolar Transistor (IGBT) family of power devices. It is a high-side MOSFET with an on-resistance of 8 ohms.The IXFH58N20Q is designed to be used in high-side protected switching applications in the automotive and industrial sectors. This device can be used in a variety of applications. It is suitable for applications in load switching and DC-DC voltage conversion, such as DC Motor Speed Control, Solenoid and relay control, and FET Gate driving. In addition, this device is also suitable for low-noise applications such as audio pre-amplifier switching and filtering.The IXFH58N20Q has two modes of operation. First, it can be used in a constant current mode, in which the drain current is controlled with a resistor. Second, it can be used in a voltage-mode control, in which the drain voltage is controlled with an external voltage source.The IXFH58N20Q is a high-bandwidth device. It can handle high-frequency signals up to 10MHz, allowing it to be used in switching power supplies and DC-DC converters. The device also has a low threshold voltage, making it suitable for low voltage applications.In terms of performance, the IXFH58N20Q has a very low on-resistance, allowing it to handle high current loads. It has a low gate capacitance, making it suitable for high-frequency applications, and a low gate-charge, making it energy efficient.The IXFH58N20Q offers a number of safety features to help protect it from over-current, over-voltage and other potentially destructive failures. It has a built-in protection circuit, which is designed to limit the current flow in the event of a short circuit. The IXFH58N20Q also has an over-temperature shutdown feature which will disable the MOSFET if the temperature of the device exceeds a certain threshold.Overall, the IXFH58N20Q is a versatile and reliable power MOSFET. It can be used in a variety of applications, and offers reliable performance with a number of safety features. It is a great choice for load switching, high-side protected switching and DC-DC voltage conversion applications.
The specific data is subject to PDF, and the above content is for reference
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