IXFH6N120

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The IXFH6N120 is a high voltage N-Channel enhancement mode power MOSFET from IXYS, specifically designed for applications within industrial applications and high voltage power suppl. This MOSFET is a silicon-gate device with self-protected cell design, making it the ideal power device for digital switching applications.

The IXFH6N120 is a N-Channel MOSFET with a very high current capacity. It has a low on resistance of 0.9mΩ and a maximum current rating of 80A. It is characterized by an operating temperature range between -55°C and +150°C, and a breakdown voltage up to 500V. The typical specific on-resistance is 0.9mΩ.

This type of MOSFET is used to provide high efficiency power switching and can be used in a wide variety of applications including motor control, power conversion, and other industrial control applications. Additionally, this device can be used for power factor correction and combine packaging of transistor and diode.

The IXFH6N120 MOSFET works on the principle of the electric field-effect. In this device, there is a source terminal, a drain terminal, and a gate terminal. When the gate terminal is held at a positive potential, majority carriers such as electrons are attracted to the channel region and a conducting channel is created between the source and drain terminals. The intensity of this channel is determined by the value of the gate voltage. Therefore, by changing the gate voltage, the current conducting capacity of this device can be controlled.

The IXFH6N120 has a wide range of applications. It is commonly used in high-voltage applications requiring a low on-state resistance. It can be used as a switch in various power electronic circuits, such as motor control, UPS systems, and audio systems. Additionally, it can be used in power supply circuits such as DC-DC converters, AC-DC converters, and active power line conditioners. It is also well suited for automotive applications.

The IXFH6N120 is a high-efficiency device used in industrial as well as commercial applications. It provides excellent switching performance with a low on-state resistance and high current capacity. Furthermore, due to its low power consumption and temperature range, it is suitable for use in a wide variety of applications in the industrial, automotive, and consumer sectors. Overall, this device is an ideal choice for a variety of power switching applications.

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