IXFH6N120P

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IXFH6N120P is a single N-channel power field-effect transistor. It is designed for use in switched mode power supplies, motor control and other power switching applications. It has an improved gate and avalanche characteristics featuring low gate charge and low gate-source voltage. The IXFH6N120P is ideal for use in applications requiring low gate-source voltage and high performance.

Features

• Maximum drain current: 19A
• Maximum drain-source voltage: 100V
• Maximum gate-source voltage: ±25V
• Maximum power dissipation: 115W
• Operating junction temperature: 150°C
• Maximum peak current: 680A

Working Principle

The IXFH6N120P is a field-effect transistor, which uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. It is a three-terminal device with source, drain, and gate. A voltage applied to the gate of the FET will create an electric field, which in turn will control the current flowing from the source to the drain. The drain current can be controlled by varying the voltage applied to the gate. When the voltage applied to the gate is low, the current flows freely from the source to the drain, and it is said to be in an “on” state. When the voltage is increased to a point that the electric field is strong enough, the current flow is completely shut off, and it is said to be in an “off” state.

Application

The IXFH6N120P is widely used in a variety of applications, such as motor control, power switching and other power supplies applications. It is specifically designed for switched mode power supplies and motor control applications. It is suitable for AC and DC motor starting, speed control, load control and high-side current sensing.

It is also used in various other applications such as digital logic, amplifiers, power line noise filter and other interstage applications. It is also used in audio amplifiers, switching converters, high-side switch and current sensing. It is suitable for both high and low voltage application. Due to its low gate charge, it is suitable for high switching speed applications.

In addition, the IXFH6N120P is also well-suited for high-side switch applications, switching regulators and high-current loads. It can also be used for other power switching applications, such as AC and DC motor control. In addition, it is also well-suited for applications that require low gate-source voltages.

Conclusion

IXFH6N120P is a power field-effect transistor designed for use in various power switching applications, such as switched mode power supplies and motor control. It has low gate charge and low gate-source voltage and is ideal for use in applications requiring high performance. Its various features make it suitable for various applications, such as motor control, power switching and other power supplies applications.

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