IXFH76N07-12 Allicdata Electronics
Allicdata Part #:

IXFH76N07-12-ND

Manufacturer Part#:

IXFH76N07-12

Price: $ 7.40
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 70V 76A TO-247AD
More Detail: N-Channel 70V 76A (Tc) 360W (Tc) Through Hole TO-2...
DataSheet: IXFH76N07-12 datasheetIXFH76N07-12 Datasheet/PDF
Quantity: 69
1 +: $ 6.72210
30 +: $ 5.51019
120 +: $ 4.97259
510 +: $ 4.16624
Stock 69Can Ship Immediately
$ 7.4
Specifications
Vgs(th) (Max) @ Id: 3.4V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 12 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFH76N07-12 is a type of transistor commonly used in silicon semiconductor devices, specifically in field effect transistors and metal oxide semiconductor field effect transistors (FETs and MOSFETs, respectively). This type of transistor acts as a switch in electronic circuits, allowing a current to pass through an electrical connection when it is turned on and blocking the current when it is turned off. It can be used in a variety of different applications, but is most commonly used in power and energy applications, due to its superior performance and reliability. This article will examine the application field and working principle of the IXFH76N07-12.

Application Field of IXFH76N07-12

The IXFH76N07-12 is well-suited for use in a wide range of applications, including in power and energy applications. It is specifically designed to withstand elevated temperatures and to provide a high level of power efficiency. This makes it well-suited for use in power supplies, power converters, solar photovoltaic systems, and other energy-conversion applications. The IXFH76N07-12 can also be used in applications such as induction heating, motor drives, DC-DC converters, and lighting ballasts. It is also commonly used in power semiconductor devices, such as rectifiers and thyristors, as well as in other power management circuits. Finally, it is often used in automotive and industrial applications.

Working Principle of IXFH76N07-12

The IXFH76N07-12 is a field effect transistor that works through the use of a gate voltage. The gate voltage is applied to the gate electrode of the transistor, which then controls the flow of electrons between the source and the drain. When the gate voltage is low, the electrons flow freely between the source and the drain. When the gate voltage is increased, the flow of current is restricted. This allows the IXFH76N07-12 to operate as a switch, allowing current to flow through the circuit when it is turned on and blocking the current when it is turned off. This makes it useful for a variety of applications, such as power and energy sources.

Conclusion

In conclusion, the IXFH76N07-12 is a type of transistor commonly used in a variety of applications. It is well-suited for use in power and energy applications due to its ability to withstand elevated temperatures and to provide a high level of power efficiency. This type of transistor works through the use of a gate voltage, which controls the flow of current between the source and the drain. This allows it to act as a switch, allowing current to flow through the circuit when it is turned on and blocking the current when it is turned off. This makes the IXFH76N07-12 ideal for use in applications such as power supplies, power converters, and solar photovoltaic systems.

The specific data is subject to PDF, and the above content is for reference

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