IXFH7N80

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The IXFH7N80 is an improved high voltage, high speed field effect transistor (FET) from IXYS Corporation. It is designed to combine N-channel MOSFET technology with a rectangular source layout that is intended to maximize thermal performance and reduce on-resistance. This FET also has low gate charge and low gate-source capacitances, as well as excellent high speed switching characteristics. The IXFH7N80 is an ideal choice for applications requiring high power, large current, and high performance.

The IXFH7N80 has a breakdown voltage of 700 V and an on-resistance range from 0.6 Ω up to 1.2 Ω. This FET has a negative voltage gate threshold that ranges from -2 V to -4 V. It is specifically designed for applications such as power supply switching, motor drive and control, as well as other applications where high power, speed, and reliability are critical. In addition, the IXFH7N80 is suitable for switching power supplies, DC-DC converters, motor drivers, battery management, telecom equipment, UPS systems, and more.

The working principle of the IXFH7N80 involves the free electrons in the N-type channel, which are attracted to the gate region by the gate voltage (Vgs). A positive voltage applied to the gate results in a decrease in the drain-source resistance. This decrease causes a corresponding increase in current through the drain-source interface, while a negative voltage applied to the gate increases the drain-source resistance and decreases the drain-source current. Therefore, the IXFH7N80 can be configured as an electronic switch, allowing it to be used for regulating the flow of current from the source region to the drain.

The IXFH7N80 has several unique features that make it a versatile device for many applications. It has an ultra-low input capacitance of just 0.5 pF, making it well-suited for fast switching applications. The FET also has low gate charge for faster turn-on and turn-off times, which is useful for high speed switching. The IXFH7N80 is also designed with a three-gate layout that improves the FET’s thermal performance. This feature results in the FET having an increased power dissipation, which is approximately 2.7 times higher than its predecessor. In addition, the FET has very low gate-source capacitances, which helps reduce switching losses.

The IXFH7N80 is a powerful and reliable FET that is designed to meet the requirements of high power and high speed applications. Its low input capacitance and low gate charge make it ideal for fast switching applications, while its three-gate layout improves its thermal performance and increases its power dissipation. In addition, its low gate-source capacitances result in lower switching losses, making it a great choice for applications where power, speed, and reliability are critical.

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