IXFH80N15Q

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IXFH80N15Q is a powerful device, helming the task of modern day power management solutions. It is included in the IXYS Power MOSFET product line and belongs to the category of single N-Channel fast switching MOSFET. It has been designed with advanced carbon design and cell planar construction to provide unparalleled performance. This device features incredible efficiency and performance, boasting of an 18A continuous drain current and a maximum drain-source voltage of 100V.

The IXFH80N15Q is an Indium Gallium Nitride field effect transistor, which has some great benefits. One of the most notable benefits is its high switching speed, which means it draws less current and dissipates less heat. In addition to this, it offers superior lower gate charge and a very low gate threshold voltage. This feature makes the IXFH80N15Q MOSFET ideal for applications that require very little power, such as mobile consumer electronics.

Whether you\'re using it for power conversion in AC/DC, or power management in high frequency forward and flyback topologies, the IXFH80N15Q MOSFET has the power you need. It also offers excellent power conversion efficiency with very low reverse recovery time. Furthermore, this MOSFET comes with a high surge withstand capability of 2500 volts.

The working principle of the IXFH80N15Q is centered around its intrinsic MOSFET structure. When voltage is applied to the gate, it creates an electrostatic field which causes the formation of a conducting channel between the drain and source, thus allowing current to flow. The current that is allowed to flow between the drain and source is determined by the voltage applied to the gate.

The device also comes with several protective features such as over-temperature, over-voltage and over-current protection, which help protect against the potential for damage or malfunction. The robust construction of the IXFH80N15Q ensures reliable performance, even in extreme conditions.

Because of its incredibly low on-state resistance, incredibly fast switching speed, reliable operation and wide operating temperature range, the IXFH80N15Q is well-suited for a wide range of applications. This MOSFET is popularly used in power distribution systems, power conversion and inverter applications. It can also be used in electronic ballast devices, automotive applications, and many other power control and regulation applications.

The IXFH80N15Q MOSFET is a powerful and reliable device that can very well be used to occupy the modern day power management solutions. It has been designed with advanced carbon design and cell planar construction to provide unparalleled performance. Furthermore, its protective features, robust construction and wide operating temperature range make it suitable for a wide range of applications.

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