| Allicdata Part #: | IXFH86N30T-ND |
| Manufacturer Part#: |
IXFH86N30T |
| Price: | $ 5.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 300V 86A TO-247 |
| More Detail: | N-Channel 300V 86A (Tc) 860W (Tc) Through Hole TO-... |
| DataSheet: |  IXFH86N30T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 5.36000 |
| 10 +: | $ 5.19920 |
| 100 +: | $ 5.09200 |
| 1000 +: | $ 4.98480 |
| 10000 +: | $ 4.82400 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 860W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 43 mOhm @ 43A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFH86N30T is a single-pole double-throw (SPDT) N-channel MOSFET. N-channel MOSFETs are used in electronic circuits because of their superior electrical performance in comparison to P-channel MOSFETs. They are typically used as switches or amplifiers for controlling and manipulating various signals, depending on the application. The IXFH86N30T is an ideal choice for applications where low-voltage and low-current per channel is necessary, such as pulse-width modulation (PWM), power management and level shifting.
The IXFH86N30T has a transconductance of 300mS at 10V and 10mA and a high saturation current of 16mA. The maximum drain-source voltage is 30V and the drain-source on-resistance is just 75mΩ at 10V. It has a maximum drain current of 34mA and a maximum gate-source voltage of ±20V. It also has a gate capacitance of 37pF and gate-source leakage current of just 2µA.
The IXFH86N30T is primarily used as an electronic on-off switch. It is also used to amplify signals such as audio and video signals. Its superior electrical performance makes it ideal for a wide range of applications, such as motor control, power management, and switching applications. This MOSFET can also be used to regulate the power in LED lighting systems.
The working principle of the IXFH86N30T is based on the field-effect principle of transistor action. When the gate voltage increases, the channel in the MOSFET becomes wider and more current is allowed to pass through. When the gate voltage decreases, the channel shrinks and the passage of current is inhibited. In this way, a MOSFET can act as an on-off switch, controlling the flow of current.
The IXFH86N30T is an ideal choice for a wide range of applications, such as pulse-width modulation, motor control, level shifting, power management, and signal amplification. Its superior electrical performance and its flexibility make it an ideal choice for a wide range of applications. The IXFH86N30T is a reliable and powerful choice for any application.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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